| | Parameter | Min | Typ. | Max | Units | Conditions |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 | | | V | VGS = OV, ID = 250pA |
| CV(BR)DSS/CiTJ | Breakdown Voltage Temp. Coefficient | | 0058 | | V/oC | Reference t0 25aC, ID = 1mA |
| RDS(on) | Static Drain-to-Source On-Resistance | | | 14 | ml | VGS = 10V, ID = 32A |
| VGS(th) | Gate Threshold Voltage | 2 0 | | 4 0 | V | VDS = VGS, ID = 250pA |
| 9fs | Forward Transconductance | 24 | | | S | VDS = 25V, ID = 32A~ |
| | | | | 25 | | VDS = 55V, VGS = OV |
| IDSS | Drain-to-Source Leakage Current | | | 250 | UA | VDS = 44V, VGS = OV, TJ = 1500C |
| | Gate-to-Source Forward Leakage | | | 100 | | VGS= 20V |
| IGSS | Gate-to-Source Reverse Leakage | | | -100 | nA | VGS= -20V |
| Qg | Total Gate Charge | | | 81 | | ID = 32A |
| Qgs | Gate-to-Source Charge | | | 19 | nC | VDS = 44V |
| Qgd | Gate-to-Drain ("Miller") Charge | | | 30 | VGS = 10V, See Fig. 6 and 13 |
| td(on) | Turn-On Delay Time | | 12 | | | VDD = 28V |
| tr | Rise Time | | 78 | | ID = 32A |
| td(off) | Turn-Off Delay Time | | 34 | | ns | RG = 0.851 |
| tf | Fall Time | | 50 | | VGS = 10V, See Fig. 10 |
| Ls | Internal Source Inductance | | 7.5 | | nH | Between lead, and center of die contact |
| ciss | Input Capacitance | | 1970 | | pF | VGS = OV |
| coss | Output Capacitance | | 470 | | VDS = 25V |
| Crss | Reverse Transfer Capacitance | | 120 | | f = 1.OMHz, See Fig. 5 |
| EAS | Single Pulse Avalanche Energy~ | | 700 | 190 | mJ | IAS = 32A, L = 0.37mH |
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