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suppliers of SJ006402 and PDF data of SJ006402

Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
SJ006402	.	.	2004		50	Liverpool (Hong Kong) Electron.. Contact:Jessica Tel:86-755-83957717 Fax: Email: info@lvphk.com
SJ006402	N/A	SOP	09+	IN STOCK/Talk to Ema	25463	EUROPEAN UNION IC INDUSTRY CO. Contact:linda Tel:+852-65196286 Fax:+852-95613629 Email: jacky@ic-industry38.com
SJ006402	.	.	2004		50	Liverpool(HongKong)Electronics.. Contact:Jessica Tel:86-755-83957717 Fax:86-755-82764159 Email: info@lvphk.com

SJ006402 Datasheet

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SJ006402 Price

SYMBOL	PARAMETER	CONDITIONS		MIN TYP MAX	UNITS
IOUT	Maximum Output Current	VOUT = +3V, 30mV Overdrive TA = OIC t0 70rC TA = -40rC t0 85rC	q q	+50 +80 +45 +40	mA mA mA
IOUT	Maximum Output Current (Low Power Mode) (Note 10)	LT1815S6/LT1816A; 40k ] Between ISET and V-; VOUT = +3V, 30mV Overdrive TA = OIC t0 70rC TA = -40rC t0 85rC	q q	+50 +75 +40 +30	mA mA mA
Isc	Output Short-Circuit Current	VOUT = OV, 1V Overdrive (Note 3) TA = OIC t0 70rC TA = -40rC t0 85rC	q q	+100 +200 +90 +70	mA mA mA
SR	Slew Rate	Av = -1 (Note 5) TA = OIC t0 70rC TA = -40rC t0 85rC	q q	900 1500 750 600	j\| j\| \uc~
FPBW	Full-Power Bandwidth	6Vp_p (Note 6)		80	MHz
GBW	Gain-Bandwidth Product	f = 200kHz, RL = sooI , LT1815 TA = OIC t0 70rC TA = -40rC t0 85rC	q q	150 220 140 130	MHz MHz MHz
	Gain-Bandwidth Product	f = 200kHz, RL = soo I , LT1 81 6/LT1 817 TA = OIC t0 70rC TA = -40rC t0 85rC	q q	140 220 130 120	MHz MHz MHz
	Gain-Bandwidth Product (Low Power Mode) (Note 10)	LT1 81 5S6/LT1 81 6A; 40k l Between ISET and V-; f = 200kHz, RL = soo I TA = OIC t0 70rC TA = -40rC t0 85rC	q q	35 55 30 25	MHz MHz MHz
-3dB BW	-3dB Bandwidth	Av = 1, RL = soo I		350	MHz
l rtf	Rise Time, Fall Time	Av = 1, 10% t0 90%, O.lV, RL = ioo I		1	ns
tPD	Propagation Delay	Av = 1, 50% t0 50%, O.lV, RL = 100 [		1.4	ns
OS	Overshoot	Av = 1, O.lV; RL = ioo I		25	%
tS	Settling Time	Av = -1, 0.1%, 5V		15	ns
THD	Total Harmonic Distortion	Av = 2, f = 5MHz, VOUT = 2Vp_p, RL = soo I		-70	dB
dG	Differential Gain	Av = 2, VOUT = 2Vp_p, RL = iso I		0.08	%
dP	Differential Phase	Av = 2, VOUT = 2Vp_p, RL = iso I		0.04	Deg
ROUT	Output Resistance	Ay=l,f=lMHz		0.20
Is	Supply Current	LT1815 TA = OIC t0 70rC TA = -40rC t0 85rC	q q	6.5 7 9 10	mA mA mA
	Supply Current	LT1816/LT1817, per Amplifier TA = OIC t0 70rC TA = -40rC t0 85rC	q q	6.5 7.8 10.5 11.5	mA mA mA
	Supply Current (Low Power Mode) (Note 10)	LT1 81 5S6/LT1 81 6A, 40k l Between ISET and V-, per Amplifier TA = OIC t0 70rC TA = -40rC t0 85rC	q q	1 1.5 1.8 2O	mA mA mA
ISET	ISET Pin Current (Note 10)	LT1815S6/LT1816A TA = OIC t0 70rC TA = -40rC t0 85rC	q q	-15 0 -10 0 -175 -200

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DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCER	40	Vdc
Collector-Base Voltage	VCBO	50	Vdc
Emitter-Base Voltage (collector open)	VEBO	4.0	Vdc
Collector Current (continuous)	Ic	10	Adc
Total Device Dissipation at Tflange = 25aC Above 25aC derate by	PD	1 75 1.0	Watts w/oC
Storage Temperature Range	TSTG	-40 to +150	aC
Thermal Resistance (Tflange = 700C)	RejC	1.0	0 c/w

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