RS02B110R0GB12 Datasheet| Symbol | Parameter | Value | Unit | | VCES | Collector-Emitter Voltage (VBE = 0) | 1500 | V | | VCEO | Collector-Emitter Voltage (lB = 0) | 700 | V | | VEBO | Emitter-Base Voltage (lc = 0) | 10 | V | | lc | Collector Current | 8 | A | | ICM | Collector Peak Current (tp < 5 ms) | 15 | A | | | | TO -3 | TO218 | ISOWATT218 | | | Ptot | Total Dissipation at Te = 25 0C | 150 | 125 | 50 | W | | Tstg | Storage Temperature | -65 t0 150 | -65 t0 150 | -65 t0 150 | oC | | Ti | Max. Operating Junction Temperature | 150 | 1 50 | 150 | oC | | | | | | |
RS02B110R0GB12 Price| PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | | Setup time, DIN before SCLK high | tsu (DS) | 45 | | | ns | | Hold time, DIN valid after SCLK hiqh | th (DH) | O | | | ns | | Setup time, CS low to SCLK high | tsu (CSS) | 1 | | | ns | | Setup time CS hiqh to SCLK hiqh | tsu (CSl) | 50 | | | ns | | Hold time, SCLK low to CS low | th (CSHO) | 1 | | | ns | | Hold time, SCLKlow to CS high | (CSHI) | O | | | ns | | Pulse duration, min. chip select pulse width height | tw(CS) | 20 | | | ns | | Pulse duration, SCLK low | tw (CL) | 18 | | | ns | | Pulse duration, SCLK high | tw (CH) | 18 | | | ns | | | | | | |
RS02B110R0GB12 on stock SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether- lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. | | | I¨Sl VCE = -6.0 V, IE = 1.0 mA, f = 1.0 kHz hie = 5.5 k92, hre = 7.5 x l04 | | | | hfe = 205, h = 28 ruS | | | | | | | | | | | | | | | | | | | | | | | | | | | iloe hre : :lff. | | | | | | Ih1 | | | | | 1ie | | | | | | o | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
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