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suppliers of RR1816P-272-B-T5 and PDF data of RR1816P-272-B-T5

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
RR1816P-272-B-T5         8485 


RR1816P-272-B-T5         8485 
    S&L Technology Development co..
  • Contact:Jennifer Zeng
  • Tel:86-755-83511882
  • Fax:86-755-83511886
  • Email: jennifer@xkzd.net


RR1816P-272-B-T5     09+    4945 
    Nuoxinyuan Electronics Co.,Ltd
  • Contact:Regina
  • Tel:86-755-83957733
  • Fax:86-755-83956848
  • Email: regina@nxy-ic.com
RR1816P-272-B-T5         7250 


RR1816P-272-B-T5         8945 
    All Element Technology Co.,Ltd
  • Contact:lisa
  • Tel:86-755-82565926
  • Fax:86-755-82565338
  • Email: lisa@allelement.net
RR1816P-272-B-T5     08+    5000 
    Hongtu Trading Limited
  • Contact:yan
  • Tel:86-755-82500330
  • Fax:
  • Email: hongtutl@163.com
RR1816P-272-B-T5     06+  new and original in   8485 
    Bosin (HK) Electronics Limited..
  • Contact:Baron
  • Tel:86-755-83640678
  • Fax:86-755-83227368
  • Email: faith@bosin.hk
RR1816P-272-B-T5         8945 
    PERFECTION INT鈥橪 GROUP (HONGKO..
  • Contact:SUN
  • Tel:0086-755-25887780
  • Fax:0086-755-25831006
  • Email: david@perfectionhk.com
RR1816P-272-B-T5 A/N    8945     
RR1816P-272-B-T5         10445 
    ExcellentElectronics(hk)Co.,Lt..
  • Contact:Ms.AnneHuang
  • Tel:86-755-82727096/61685817
  • Fax:86-755-82731987
  • Email: anne@hkexcellent.com

RR1816P-272-B-T5 Datasheet

PARAMETER DESCRIPTION EXAMPLE
1st block first block in the user memory with which you want to start the access; the first block in the user memory is block 4 4
# of blocks number of blocks starting with the lst block you want to access 4
of labels maximum number of labels that will be in the antenna field 8
Enable FastMode if you click at this button the l-CODE reader works in fast mode


RR1816P-272-B-T5 Price

ltem PGM PG (AV) VFGM IFGM Ti Tstg
Thyristor 0 0 0 0 0 0
Diode 0 0


RR1816P-272-B-T5 on stock
The resistor in series with the gate of the power MOSFET transistor also results in much slower switching performance than in standard power MOSFET transistors. This is an advantage where fast switching can cause EMI or RFI. The switching speed is very predictable.

lr= 0 B
'r= 75IC ||l
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