ADMap-12  > RR1220P-2151-B-M-T5
description RES 2.15K OHM 1/10W .1% 0805 SMD
Technical/Catalog Information RR1220P-2151-B-M-T5
Vendor Susumu Co Ltd
Category Resistors
RoHS Status RoHS Non-Compliant
Other Names RR1220P 2151 B M T5 RR1220P2151BMT5 RR12P2 15KBTR ND RR12P215KBTRND RR12P2.15KBTR
Lead Free Status Contains Lead
Packaging Tape & Reel (TR)
Tolerance 卤0.1%
Temperature Coefficient 卤25ppm/掳C
Resistance In Ohms 2.15K
Voltage - Working 14.663V
Power (Watts) 0.1W, 1/10W
Lead Style Surface Mount (SMD - SMT)
Case 0805 (2012 metric)
Composition Thin Film

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RR1220P-2151-B-M-T5 Datasheet

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 100 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward current 8 = 0.5 T0-220AC/ 12PAK/D2PAK Tc= 165IlC 8 A
ISOWATT220AC Tc= 1501C
IFSM Surge non repetitiveforward current tp =10 ms sinuso dal 250 A
IRRM Repetitive peak reverse current tp =2,6 F = 1kHz square 1 A
lRSM Non repetitive peak reverse current tp =100 square 3 A
Eas Non repetitive avalanche energy Tj = 251C L = 60 mH las =2 A 24 mJ
lar Repetitive avalanche current Va = 1.5 x VR typ Current decayinglinearly to Oin 1 Frequencylimited by Tj max. 2 A
Tstg Storage temperature range - 65 to+ 175 IC
Tj Maximum operatingjunction temperature 175 1C
dV/dt Critical rate of rise of rise voltage 10000 V/ccS


RR1220P-2151-B-M-T5 Price

Items I Symbols I Test Conditions Min Typ. Max. Llnits
Nr I Rthci-c) I Transistor 10. 156 'c/w
I Rth{i-ci l Diode (FRD) 10 65 'c/w
I Riricc-i) I Mounting Torque 35kg- cm, With Thermal Compound 10 025 6c/w


RR1220P-2151-B-M-T5 on stock

Parameter Symbol Conditions min typ max Unit
Collector to base voltage VCBO Ic = -lOc~,IE = 0 -30 V
Collector to emitter voltage VCEO IC = -2rriA, IB = 0 -30 v
ICBO VCB = -30V,IE = 0 - 0.1
Collector cutoff current ICEO VCE = -30V, IB = 0 - 0.5 DA
Emitter cutoff current IEBO VEB = -3V,Ic = 0 - 0.1 mA
Forward current transfer ratio hFE VC[ = -IOV, Ic = -5mA 80
Collector to emitter saturation voltage VCE(sat) Ic = -50mA,IB = - 0.33mA - 0.5 -1.2 V
Output voltage high level VOH Vcc = -5V,VB = - 0.5V, RL = lkl -4.9 v
Output voltage low level VOL Vcc = -5V, VB = -2.5V, RL = lkl - 0.2 V
Input resistance Ri -30% 10 +30% kl
Resistance ratio Rl/R2 0 213
Transition frequency fT VCB = -10V,IE = ImA, f= 200MHz 80 MHz


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