If both byte enables are toggled together, this value is 10 ns. tHZOE, tHZCE, tHZBE, arid tHZWE trarisitions are measured when the_outputs enter a high-impedance state The internal Write time of the memory is defined_by the overlap of WE, CEi = VIL, BHE and/or BLE = VIL Device is continuously selected. OE, CEi = VIL, BHE and/or BLE = VIL, CE2 = VIH. WE is HIGH for Read cycle.
RR0816P-681-B-T5 Price| | | | Al/AZ | = LJI\JU |
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| | | 25IC | | | |
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| | | | | 10 15 20 25 30 | OUTPUT SINK CURRENT (mA) |
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RR0816P-681-B-T5 on stock| 140 120 100 80 60 40 20 o | Al AVAVef BVXA:50v@IK:10mA ', CVKA:10V@IX:10mA : DVKA:15v@ix:10mA T. : 250C |
| 1000 | 1n 10n 100n llJ 10~J |
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Upon receiving an ERAL command,the CS (Chip Select) pin must be deselected for a minimum of tCSMIN. The falling edge of CS will start the self-timed clear cycle of all memory locations in the device. The clocking of the SK pin is not necessary after the device has entered the self-timed mode. (Note l.) The ready/busy status of the CAT93HC46 can be determined by selecting the device and polling the DO pin. Once cleared, the contents of all memory locations will return to a logical "1" state.
