ADMap-12  > RR0816P-4220-D-61A
description RES 422 OHM 1/16W .5% 0603 SMD
Technical/Catalog Information RR0816P-4220-D-61A
Vendor Susumu Co Ltd
Category Resistors
RoHS Status RoHS Compliant
Other Names RR0816P 4220 D 61A RR0816P4220D61A RR08P422DTR ND RR08P422DTRND RR08P422DTR
Lead Free Status Lead Free
Packaging Tape & Reel (TR)
Tolerance 卤0.5%
Temperature Coefficient 卤25ppm/掳C
Resistance In Ohms 422
Voltage - Working 5.156V
Power (Watts) 0.063W, 1/16W
Lead Style Surface Mount (SMD - SMT)
Case 0603 (1608 metric)
Composition Thin Film

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RR0816P-4220-D-61A Datasheet

Parameter Min Typ. Max Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage~ 900 V VGE = OV, lC = 2501JA
CX/(BR)CES/CiTJ Temperature Coeff. of Breakdown Voltage 0 295 V/oc VGE = OV, IC = 3.5mA
VCE(on) Collector-to-Emitter Satu ration Voltage 2 25 2 7 V lc = 28A VGE = 15V
2 74 lc = 60A See Fig. 2, 5
2 12 lc = 28A, TJ = 1500C
VGE(th) Gate Threshold Voltage 3.0 6 0 VCE = VGE, lC = 250pA
qVGE(th)/qX J Temperature Coeff. of Threshold Voltage -13 mV/oC VCE = VGE, lC = 250pA
9fe Forward Transconductance'9 26 39 S VCE = 50V, lC = 28A
lCES Zero Gate Voltage Collector Current 500 pA VGE = OV, VCE = 900V
2 0 VGE = OV, VCE = 10V, TJ = 250C
6 5 mA VGE = OV, VCE = 900V, TJ = 1500C
VFM Diode Forward Voltage Drop 2 5 3.5 V lc = 16A See Fig. 13
2.1 3 0 lc = 16A, TJ = 1500C
IGES Gate-to-Emitter Leakage Current ±100 nA VGE= +20V


RR0816P-4220-D-61A Price
Pin Descriptions Tl . . . . . . . .188 Pin Diagram . . ' . .188 Pin Definitions and Function . . . . . . .189
RR0816P-4220-D-61A on stock

Class R Q P
hFE2 60120 90180 130260


Pre-Radlatlon ElectrIcal SpeclflCW18 TC =+25'C, Unless Otherwtse Spednad
ur ITS
PARAMETER SYMOL TEST CONIHTIONS MIN ^AX UNITS
Draln-Sourco Breakdown Volts BWSS VGS - O,lD -1mA -200 V
Gate-Threshold Volts VGS(th) VDS = VGS,ll}.lmA -2.0 -4.0 V
Gate-Body LeakaSp Forward JGSSF VGS= -20V' 1 nA
Gate-Body Leakatp Rewrse IGSSR VGS - +20V 100 nA
Zero-Gata Voltage Drain Current IDSSi IDSS2 IDSS3 VDS = -200V, VGS =O VDS - 160V,VGS - O . VDS - -160V,VGS - O,TC = 41250C 0.025 025 mA
Rated Avalanc:ho Ccrrent IAR llme= 20ps 9 A
Draln-Source (hState Volts VDS(on) VGS = -10V,ID = 3A 4.1 V
Draln-Source On Reslstance RDS(on) VGS = -10V,ID = 2A 1.3 O
Tum-On Delay Tkne td(on) VDD s.lOOV,lD = 3A 58
Rise llme Pulse lMdth = 3}ts 76 ns
Tum-Off Delay Tlme td(of0 Perlod .300ps, Rg = 25fl 48
Fa_llme O s VGS S 10 (See Test ClrcuK} 54
Gata-Charge Threshold Qa(th) 1 4
Oate-Charge On Stak QG(on) 13 52 na
Gate-Charge Total QGM VDD - 100V,ID = 3A 28 114
Plateau Voltage VeP IGSl = ICtS2 Os VGS s 20 -3 -12 V
Gate-Charge Source aGS 4 16
Gate Chqe Draln QGD 4 16 nC
Dlode Forward Vokage VSD ID=3A,VOD=O o6 -1.8 V
Reverse Recovery Tlme I = 3A; dVdt = 100)V}rs TBD ns
Juncbon-To-Case FWJc 5O oc/w
Junction.To.Ambient ROJa Fma Air Operation 175
E1 _ 0.6 BVOSS :. 0.7S aVOSS FIGURE l. SWITCHING TIME TESTING FIGURE Z CUWPED INDUCTIVE SWITCHING.ILM