ADMap-12  > RR0816P-3922-B-T5-58C
description RES 39.2K OHM 1/16W .1% 0603 SMD
Technical/Catalog Information RR0816P-3922-B-T5-58C
Vendor Susumu Co Ltd
Category Resistors
RoHS Status RoHS Compliant
Other Names RR0816P 3922 B T5 58C RR0816P3922BT558C RR08P39 2KBTR ND RR08P392KBTRND RR08P39.2KBTR
Lead Free Status Lead Free
Packaging Tape & Reel (TR)
Tolerance 卤0.1%
Temperature Coefficient 卤25ppm/掳C
Resistance In Ohms 39.2K
Voltage - Working 49.695V
Power (Watts) 0.063W, 1/16W
Lead Style Surface Mount (SMD - SMT)
Case 0603 (1608 metric)
Composition Thin Film

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RR0816P-3922-B-T5-58C Datasheet
For optimum electrical and thermal performance, the driver should be soldered directly into the board. The driver supply terminal, VBB, should be decoupled with an electrolytic capacitor placed as close to the device as possible. To avoid problems due to capacitive coupling of the high dv/dt switching transients, route the high-level, output traces away from the sensitive, low-levellogic traces. Always drive the logic inputs with a low source impedance to increase noise immunity. Grounding. A star ground system located close to the driver is recommended. The logic supply return and the driver supply return should be connected together at only a single point - the star ground. Logic supply voltage, VDD. Transients at this terminal should be held to less than 0.5 V to avoid malfunctioning operation. Both VBB and VDD may be turned on or off separately.
RR0816P-3922-B-T5-58C Price
Due to the size ofthe package, Micron's standard part number is not printed on the top of each device. Instead, an abbreviated device mark comprised of a five-digit alphanumeric code is used. The abbreviated device marks are cross referenced to the Micron part numbers in Table l.
RR0816P-3922-B-T5-58C on stock

Line card Vbat T
Rs(*) l
( Line ( I TIP : GND 220nF _I_ :, LGP02 i~- TIP
7 l l j j Rs() 220nF SLIC
( L___________J I RING
_L +Vb
Rs f+1 = PTC or Resistor fuse


Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 8 < 1%) 55 A
EAS Single Pulse Avalanche Energy (starting Tj = 25 0C, ID = IAR, VDD = 25 V) 200 mJ