ADMap-12  > RR0816P-3092-B-T5-48C
description RES 30.9K OHM 1/16W .1% 0603 SMD
Technical/Catalog Information RR0816P-3092-B-T5-48C
Vendor Susumu Co Ltd
Category Resistors
RoHS Status RoHS Compliant
Other Names RR0816P 3092 B T5 48C RR0816P3092BT548C RR08P30 9KBTR ND RR08P309KBTRND RR08P30.9KBTR
Lead Free Status Lead Free
Packaging Tape & Reel (TR)
Tolerance ±0.1%
Temperature Coefficient ±25ppm/°C
Resistance In Ohms 30.9K
Voltage - Working 75V
Power (Watts) 0.063W, 1/16W
Lead Style Surface Mount (SMD - SMT)
Case 0603 (1608 metric)
Composition Thin Film

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RR0816P-3092-B-T5-48C Datasheet

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RR0816P-3092-B-T5-48C Price
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RR0816P-3092-B-T5-48C on stock
A BSOLUTE MA XIM UM RA TIN GS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation at Tcnnb = 250C D.C. current gain -IC = 10 mA; -VCE = 5 V

CY62127DV30-45 [8l CY62127DV30-55 CY62127DV30-70
Parameter Description Min Max Min Max Min Max Unit
Read Cycle
tRC Read Cycle Time 45 55 70 ns
tAA Address to Data Valid 45 55 70 ns
tOHA Data Hold from Address Change 10 10 10 ns
tACE CE LOW to Data Valid 45 55 70 ns
tDOE OE LOW to Data Valid 25 25 35 ns
tLZOE OE LOW to Low 2[12J 5 5 5 ns
tHZOE OE HIGH to High 2[12,14J 15 20 25 ns
tLZCE CE LOW to Low 2[12J 10 10 10 ns
tHZCE CE HIGH to High 2[12,14J 20 20 25 ns
tPU CE LOW to Power-up 0 0 0 ns
tPD CE HIGH to Power-down 45 55 70 ns
tDBE BLE/BHE LOW to Data Valid 45 55 70 ns
tLZBE[13] BLE/BHE LOW to Low 2[121 5 5 5 ns
tHZBE BLE/BHE HIGH to High-Zl'2.'4J 15 20 25 ns
Write Cycle['5l
twc Write Cycle Time 45 55 70 ns
tSCE CE LOW to Write End 40 40 60 ns
tAW Address Set-up to Write End 40 40 60 ns
tHA Address Hold from Write End 0 0 0 ns
tSA Address Set-up to Write Start 0 0 0 ns
tPWE WE Pulse Width 35 40 50 ns
tBW BLE/BHE LOW to Write End 40 40 60 ns
tSD Data Set-up to Write End 25 25 30 ns
tHD Data Hold from Write End 0 0 0 ns
oHZWE WE LOW to High 2[12,14J 15 20 25 ns
tLZWE WE HIGH to Low 2[12J 10 10 5 ns