L -. SV CMOS irtputs Up t0 60V modulation voltage J Capable of 16 levels of gray shading u 16MHz data throughput rate 32 0utputs per device (can be cascaded) ] Minimum 15 mA high-voltage output source/sink capability i Pin-programmable shift direction (DIR) Il D/A conversion can be performed in as little as 3.2ys Diodes in output structure allow usage in energy recovery systems - Integrated high-voltage CMOS technology - Available in 3-sided 64-lead gullwing package or as dice
RR0816P-2263-B-T5-35D on stock r . 7 5 C 0 2 8 F \ L O C 0 2 I o o ( 0 0 9 2 ) ( N O ) S O J 0 N Y I S I S Z J J V I S - N O 0 b l r l O S - N l \ f f l 0
