DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reprod ucibility.
| CHARACTERISTIC | SYMBOL | TEST CONDITION | TYP | MAX | UNIT |
| Peak Forward Voltage (Note l) | VFM | IFM= 2.5A | | O47 | V |
| Repetitive Peak Reverse Current (Note l) | lRRM | VRRM= Rated | | 3.5 | mA |
| Junction Capacitance (Note l) | ci | VR=10V, f=l.OMHz | 138 | | pF |
| Thermal Resistance | Rth (j-c) | DC Total, Junction to Case | | 3.5 | oC/W |
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