description	CONN EDGE DUAL .050 219 POS
Technical/Catalog Information	RPWB073GKHR-T621
Vendor	Sullins
Category	Connectors
Mounting Type	Through Hole
Number of Positions	219 [Nom]
Pitch	1.270 mm [Typ]
Packaging	Bulk
Height	15.570 mm [Typ]
Length	107.950 mm [Typ]
Width	11.811 mm [Typ]
Contact Finish	Gold
C	4.250 in [Nom]
D	0.465 in [Nom]
E	0.613 in [Nom]
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	RPWB073GKHR T621 RPWB073GKHRT621 S3282 ND S3282ND S3282

RPWB073GKHR-T621，there are the best RPWB073GKHR-T621 suppiers all over the world here.These are the list and detailed contact method of RPWB073GKHR-T621 suppliers all over the world as follows.You can buy or get informations of RPWB073GKHR-T621 through email , message or tel.

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RPWB073GKHR-T621 Datasheet

trench MOSFET - very low on state resistance RDSon - fast switching ISOPLUS i4_PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873
RPWB073GKHR-T621 Price

					Rat	ngs
Symbol	ltem			Conditions	Min	Max	Unit
ICBO	Collector Cut-off Current			VCB-VCBO		1.0	mA
IEBO	Emitter Cut-off Current			VEB-VEBO		400	mA
			QCA100A40 QBB100A40		300		V
VCEO (SUS)	Collector Emitter		QCA100A60 QBB100A60	lc -lA	450		V
	Sustaning Voltage		QCA100A40 QBB100A40		400		V
VCEX(SUS)	Sustaning Voltage		QCA100A60 QBB100A60	lc-20AIB2--5A	600		V
hFE	DC Current Gain			lc=lOOA, VCE=2V/5V	75/100
VCE(sat)	Collector- Em itter Sat u ration Voltage			lc=lOOA, IB-I.4A		2.0	V
VBE(sat)	Base-Emitter Saturation Voltage			lc=lOOA, IB-I.4A		2.5	V
ton		On Time				2.0
ts	Switching Time	Storage Time		Vcc=300V, lc-lOOA IBl=2A, IB2--2A		12.0	S
tf	Switching Time	Fall Time		Vcc=300V, lc-lOOA IBl=2A, IB2--2A		3.0	S
VECO	Collector- Emitter Reverse Voltage			-lc-lOOA		1.4	V
RthO-c)	Thermal Impedance			Transistor part7Diode part		0.2/0.6	c/w

RPWB073GKHR-T621 on stock

Byte Write and Block Erase Automation allow byte write and block erase operations to be executed using a two-write command sequence to the Command User Interface. The internal Write State Machine (WSM) automatically executes the algorithms and timings nec- essary for byte write and block erase operations, including verifications, thereby unburdening the micro- processor or microcontroller.Writing of memory data is performed in byte increments typically within 9 ps, an 80% improvement over current flash memory products. IPP byte write and block erase currents are 10 mA typi- cal, 30 mA maximum.Vpp byte write and block erase voltage is 11.4 V t0 12.5 V.

Stock Conditions +lOoC to +600C relative humidit\/ " 75% yearly average, without dew, maximum value for 30 days-95% Vibration Resistance 24 cycles at 15 min. each (EN 60068-6) 10 - 60Hz at 0.75mm amplitude 60 - 2000Hz at 10g acceleration Lead Pull Strength 10N (EN 60068-2-21) S old e ra bility 2600C, " 3 sec. (Wave) 3500C, " 1 sec. (Hand)

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