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RPEF12 Datasheet

Characteristics Min Typ Max Unit
Zero pressure offset 3 9 4 0 4 1
Full scale span 15 8 16 0 16 2 mA
Full scale output 20 0
Thermal effects6 Combined offset and span (0 t0 700C BTEM.../PTE2005G... +0.6 +2.5
BTE.../ PTE201 5G... to PTE2300G... (-400C to OoC, 700C t0 1000C) +0.5 +2O ±1.5 %FS0
Non-Iinearity and hysteresis (BSL)8 +0.2 +0.5
Repeatability +0.1
Long term stability7 +0.2
Output noise +0.04 %FS0
Frequency response (10% t0 90%) 1 ms
Power supply rejection Offset Span 0 05 0 03 %FSON
Power consumption (IL = 20 mA) 260 mW


RPEF12 Price

VGs =10V
ID = 1/21D Pulse Test
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RPEF12 on stock

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The A63P8336 is a high-speed SRAM containing 9M bits of bit synchronous memory, organized as 256K words by 36 bits. The A63P8336 combines advanced synchronous peripheral circuitry, 2-bit burst control, input registers, output registers and a 256KX36 SRAM core to provide a wide range of data RAM applications. The positive edge triggered single clock input (CLK) controls all synchronous inputs passing through the registers. Synchronous inputs include all addresses (AO - A17), all data inputs (l/0i - l/036), active LOW chip enable ( CE ), two additional chip enables (CE2, CE2 ), burst control inputs ( ADSC , ADSP , ADV ), byte write enables ( BWE , BWl , BW2 , BW3 , BW4 ) and Global Write ( GW ). Asynchronous inputs include output enable ( OE ), clock (CLK), BURST mode (MODE) and SLEEP mode