RPE123901Z5U105Z050V Datasheet FEATURES coOptimized for low voltage applications: 1.0 t0 3.6 V coAccepts TTL input levels between Vcc = 2.7 V and Vcc = 3.6 V coTypical VOLP (output ground bounce) < 0.8 V at Vcc = 3.3 V, Tamb = 25IC coTypical VOHV (output VOH undershoot 2 V at Vcc = 3.3 V, Tamb = 25IC coCombines demultiplexer and 8-bit latch coSe rial-to-pa rallel ca pability coOutput from each storage bit available coRandom (addressable) data entry coEasily expandable coCommon reset input coUseful as a 3-to-8 active HIGH decoder coOutput capability: standard coicc category: MSI RPE123901Z5U105Z050V Price| | | | | | | | trr __ | | | | | | | | | | | | | | Tj= | 1250C | | | | | iR = OUUV IF = 25A I | | | | | | | | | | | | RPE123901Z5U105Z050V on stock| Symbol | ltem | Conditions | Min | Typ | Max | Units | | | ICES | Collector cutoff current | VCE=VCES,VGE= OV | | | 1 | mA | | VGE(lh) | Gate-emitter threshold voltage | IC=lOrTTA,VCE= 1.OV | 5 | 6 | 7 | V | | IGES | Gate leakage current | VGE=VCES ,VCE= OV | | | 20 | VA | | VCE(sat) | Collector to emitter . | Ti= 25 0C | lc = 100A | 1.7 | 2.0 | 2.7 | V | | saturation voltage | Ti= 125 0C | VGE= 15V | | 1.95 | | | Cies | Input capacitance | VCE= 10V | | | 27 | | | Coes | Output capacitance | VGE= OV | | | 1,8 | nF | | Cres | Reverse transfer capacitance | | | 1 | Al | | ClG | Total gate charge | Vcc= 300V,lc= 100A . VGE= 15V . . | | 620 | | nC | | | td(on) | Turn-on delay time | Vcc:300V,lc= 100A | | | 1 00 | | | tr | Turn-on rise time | VGEt=VGE2=15V | | | 80 | ns | | td (off) | Turn-off delay time | RG = 6.3L2,lnductive load | | | 300 | | | Turn-off fall time | switching operation | | | 150 | | trr | Reverse recovery time | IE= 100 A | | | 150 | ns | | Clrr(9 | Reverse recovery charge | | 1.9 | | vc | | VEC | Emitter-collector . volatge | IE= 100 A,VGE= OV | | | 2.6 | V | | Rth O-c)Q - | Thermal resistance'l . | IGBT part(1/2 module) | | | 0.35 | | AI | | RthO-c)R | FWDi part(l/2 module) | | | 0.70 | ocr~ | | | Rth (c-f) | Contact thermal resistance | Case to tin,Thermal compound applied(1/2 module) | | 0.07 | | lAI | | RthO-d)Q | Thermal resistance | Tc measured point is.just under the chips | | 0,23'a | | Al | | | | | | | | | |
| Pi¨n name | Function | | AoA8 | Address inputs | | DQiDQ16 | Data inputs / outputs | | RAS | Row address strobe input | | LCAS | Lower byte control column address strobe input | | UCAS | Upper byte control column address strobe input | | W | Write control input | | OE | Output enable input | | Vcc | Power supply (+3.3V) | | Vss | Ground (OV) | | | |