RPE110X7R223K050V，there are the best RPE110X7R223K050V suppiers all over the world here.These are the list and detailed contact method of RPE110X7R223K050V suppliers all over the world as follows.You can buy or get informations of RPE110X7R223K050V through email , message or tel.

suppliers of RPE110X7R223K050V and PDF data of RPE110X7R223K050V

Part Numbert

Mfg

Packt

D/C

Descriptiont

Qty

Company/Contact

RPE110X7R223K050V Datasheet

Parameters	Limits	Units	Conditions
VFM Max. Forward Voltage Drop	1 12	v	@35A	TJ= -550C
See Fig. 101	1 41	V	@70A	TJ= -550C
	1 0	V	@35A	Tj= 250C
	1 31	V	@70A	Tj= 250C
	0 9	V	@35A	Tj= 1250C
	1 26	V	@70A	Tj= 1250C
IRM Max. Reverse Leakage Current	0 011	mA	TJ= 250C
See Fig. 201	3 2	mA	Tj= 1000C	VR= rated VR
See Fig. 201	14	mA	TJ= 1250C	VR= rated VR
CT Max. Junction Capacitance	1100	pF	VR= 5VDC (1MHz,250C)
L s Typical Series Inductance	7 8	nH	Measured from anode lead to cathode lead 6mm ( 0.025 in.) from package

RPE110X7R223K050V Price

Condltion l	Data In l	Dlrect Output	Inverse Output
Enable is Hrgh	High	High	Low
Enable is High	Law	Low	High
EnabIe is Low	Hlgh	High	Low
Enable is Low	Low	Low	High
Enable is Low AND Er a:-Ie is High	Don't Care	High Impedance	High Impedance
v+ is Low (s o.5v)	Don't Care	High Impedance	High Impedance

RPE110X7R223K050V on stock

Notes 1. FDDI Token Ring, Low Cost Fiber Physical Layer Medium Depen- dent (LCF-PMD) ANSI X3T9.5 /92 LCF-PMD / Proposed Rev. 1.3, September l, 1992. American National Standard. 2. FDDI Token Ring, Physical Layer Medium Dependent (PMD) ANS X3.166-1990 American National Standard. ISO/IEC 9314-3: 1990.

When MMAP = 1, 2K words of off-chip program memory begin at address Ox0000. 6K words of on-chip program memory ROM are at Ox0800 to OxlFFO, and the remainder 2K words of pro- gram memory ROM is at Ox3800 to Ox3FFF. An additional 6K of off-chip program memory is at Ox2000 to Ox37FF.

Suppliers Datasheet
		Exact Matc