QS5919133J Datasheet OPERATION The block diagram ( Figu re l) of the Electronic -[ag illus- trates the main elements of the device: shift register, controllogic, nonvolatile RAM, and power switch. To ini- tiate a memory cycle RESET is taken high and 24 bits are loaded into the shift register, providing both address and command information. Each bit is input serially on the rising edge of the CLOCK input. Seven address bits specify one of lhe 128 RAM locations. The remaining command bits specify read/write and byte/burst mode. Afler the first 24 CLOCKs which load the shifl register, additional CLOCKs will output data for a read or input QS5919133J Price| PARAMfR | MIN | TYP | MAX | UNITS | CONOITIONS | | OPERATING FREQUENCY | 10 | | 2000 | MHz | | | D( (URRENT | | 1 5 | 25 | mA | AT +5 VDC SUPPLV | | (ONTROLTYPE | | TL | | | 1 LINE LOGIC "O": RF COM TO RF2 LOGIC'1'=RFCOMTORF1 | | COMTROL(URRENT: HIGH LOW | | 0 | +20 +20 | uA U A | VIH : +2.7V WL : +0.5V | | INSERTION LOSS | | 0 6 0.9 1 0 1 5 | 0.8 1 2 1.6 2 2 | dB dB dB dB | IO - 2QO MHz 200 - 500 MHz 500 - IOOO MHz 1000 - 20QO MHz | | IFISERTIOFI LOSS FtATNE55 | | +0.1 | ±0.2 | dB | 20. 200MHz | | ISOlATION | 70 50 40 30 | 82 62 50 40 | | dB dB dB | 10 -100 MHz 100 - 500 MHz 500 -1000 MHz 1000 2000MHz | | VSWR: ' THRU TERMINATION | | 1.15/1 1.2/1 1.1/1 1.3/1 | 1.25/1 i.sD 1.3/1 1.5/1 | | 10 - IOOO MHz 1000 - 2000 MHz 10 - 1000 MHz 1000 - 2000 MHz | | IMPEDAr4(E | | 50 | | OHMS | | | SWIT(HIFIG SPEED | | 0 4 | 1 0 | VSEC | 50%TTLT090:{/IO%RF | | TRANSITION (RISE/FALL) TIME | | 01 | | p,SE( | 90%/10'XOR10%/90%RF | | SWIT(HlrlG [VIOEOJ TRAhISIEtITS | | 780 | | mv | PEAK VAlUE | | INTERCEPT POIMrS, 2ND 3RD | | +72 +42 | | dBm dBm | 70MHz/50MHz 35 MHz/5QMHz | | RF POWER: OPERATE NO DAMAGE | | +12 | +10 +30 | dBm dBm | O.l dB COMPRESSION | | OPERATING TEMPERATURE | -55 | +25 | +125 | ( | TA | | | | | | |
QS5919133J on stock| Device | Package | Operating Temperature | | SID2500A01-DOBO | 28-DIP-600A | -20 0C - +75)C | | | |
| Gate threshold voltage VGE = VCE, /C = 0.35 mA | E(th) | 4.5 | 5.5 | 6.5 | V | | Collector-emitter saturation voltage VGE = 15 V, /C = 25 A, Tj = 25 aC VGE = 15 V, /C = 25 A, Tj = 125 aC VGE = 15 V, /C = 42 A, Tj = 25 aC VGE = 15 V, /C = 42 A, Tj = 125 aC | VCE(sat) | | 2.7 3.3 3.4 4.3 | 3.2 3.9 | | Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 0C | /CES | | | 0.25 | mA | | Gate-emitter leakage current VGE = 25 V, VCE = OV | /GES | | | 1 00 | nA | | | | | | |
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