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QS5917T70QS Datasheet

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
DC Current Gain	hFE	-VCE = 1 V, -lc = 0.1 mA -VCE = 1 V, -lc = 1 mA -VCE = 1 V, -lc = 10 mA -VCE = 2 V, -lc = 150 mA -VCE = 2 V, -lc = 500 mA	30 60 100 100 20		300
Collector Cutoff Current	-ICEV	-VEB = 0.4 V, -VCE = 35 V			100	nA
Base Cutoff Current	-IBEV	-VEB = 0.4 V, -VCE = 35 V			100	nA
Collector-Emitter Saturation Voltage(')	-VCEsat	-lc = 150 mA, -lB = 15 mA -lc = 500 mA, -lB = 50 mA			0.40 0.75	V
Base-Emitter Saturation Voltage(')	-VBEsat	-lc = 150 mA, -lB = 15 mA -lc = 500 mA, -lB = 50 mA	0.75		0.95 1.30	V
Collector-Emitter Breakdown Voltage	-V(BR)CEO	-lc = 1 mA, lB = 0	40			V
Collector-Base Breakdown Voltage	-V(BR)CBO	-lc = 0.1 mA, IE = 0	40			V
Emitter-Base Breakdown Voltage	-V(BR)EBO	-IE = 0.1 mA, lc = 0	5.0			V
Input Impedance	hie	-VCE = 10 V, -lc = 1 mA, f= 1 kHz	1.5		15	kl
Voltage Feedback Ratio	hre	-VCE = 10 V, -lc = 1 mA, f= 1 kHz	0.1·10-4		8.10_4
Current Gain-Bandwidth Product	fT	-VCE = 10 V, -lc = 20 mA f= 100 MHz	200			MHz
Collector-Base Capacitance	CCB	-VCB = 10 V, IE = 0, f = 1.0 MHz			8.5	pF
Emitter-Base Capacitance	CEB	-VEB = 0.5 V lc = 0 f = 1.0 MHz			30	pF
Small Signal Current Gain	hfe	-VCE = 10 V, -lc = 1 mA f= 1 kHz	60		500
Output Admittance	hoe	-VCE = 10 V, -lc = 1 mA f= 1 kHz	1.0		100	ccS

QS5917T70QS Price

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QS5917T70QS on stock

+ Single +2.7V to +28V Operating Supply + 0.66% Full-Scale Accuracy + Internal Bandgap Reference + Latching Comparator Output + Three Gain Versions Available (+20VN, +50VN, +100VN) + Wide o to +28V Common-Mode Range, Independent of Supply Voltage

TermInals: P.C. type Case: glass-tllled dlallyl phthallate wllh alumlnum heat plate Encapsulation: Epoxy Welgtit: 2 0z. typ. EMI: Input tilter reduces reflected powerllne rIpple. MTBF: Value dependent upon environment and componem cerllficatlon. Part Number: 11 XX . x xx Series Voul No Out Vin

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