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QS54FCT2540ATQ QSI  器件原封装  06+  【原装订货,5-10天,飞乐飞公司诚心为  347 
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QS54FCT2540ATQ Datasheet

PIN No SYMBOL NAME AND FUNCTION
1 t0 7.15 A to H Data Inputs
9 RCO Ripple Counter Output
10 CCLR Counter Clear Input
1 1 CCK Counter Clock Input
12 CCKEN Counter Clock Enable Input
13 RCK Register Clock Input
14 CLOAD Counter Load Input
8 GND Ground (OV)
16 Vcc Positive Supply Voltage


QS54FCT2540ATQ Price

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250ccA, VGS = OV, (Figure 12) 30 V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250GCA, (Figure 11) 1 3 V
Zero Gate Voltage Drain Current IDSS VDS = 30V, TA= 250C 1 oA
VGS = OV TA= 1500c 50 oA
Gate to Source Leakage Current IGSS Vcs= +20V +100 nA
Drain to Source On Resistance rDS(ON) ID = 3.5A VGS= 10V 0 060
(Figures 9, 10) VGS= 4.5V 0 132
Turn-On Time tON VDD = 15V, ID (D3.5A, 50 ns
Turn-On Delay Time td(ON) RL = 4.291 , VGS = 10V, RGS = 2sl 10 ns
Rise Time tr 30 ns
Turn-Off Delay Time d(OFF) 60 ns
Fall Time tf 45 ns
Turn-Off Time tOFF 130 ns
Total Gate Charge Qg(TOT) VGS = OV t0 20V VDD = 24V, 35 45 nC
Gate Charge at 10V Qg(10) VGS = OV t0 10V ID = 3.5A, RL = 6.861 13 17 nC
Threshold Gate Charge Qg(TH) VGS= OV t0 2V (Figure 14) 2 3 2.9 nC
Input Capacitance cISS VDS = 25V, VGS = OV, 575 pF
Output Capacitance LOSS f = 1MHz (Figure 13) 275 pF
Reverse Transfer Capacitance RSS 100 pF
Thermal Resistance Junction to Ambient ROJA Pulse Width = 1s Device mounted on FR-4 material 62.5 oc/w


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Rev.0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 t0 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.