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QS54FCT2374ATDB Datasheet These devices feature the ability to clamp dangerous high voltage short term transients such as produced by directed or radiated electro-static-discharge phenomena before entering sensitive component regions of a circuit desig n. They are small economicaltransient voltage suppressors targeted primarily for short term transients below a few microseconds while still achieving significant peak-pulse-power capability as seen in Figure #1. QS54FCT2374ATDB Price Notes: 1. Test conditions assume signal transition times of 5 ns orless, timing reference levels of l.5V, input pulse levels of o t0 3.OV and outputloading specified in Figure la. 2. Tested with theload in Figure lb. Transition is measured +500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CEl LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. QS54FCT2374ATDB on stock
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