| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| QS3VH125QG8 | IDT | 09 | 12000 |
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| QS3VH125QG8 | INTEGRATED D | 07/08+ | EXCESS | 1527 |
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| QS3VH125QG8 | INTEGRATED D | EXCESS | 07+ | 1527 |
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| QS3VH125QG8 | 1,080 | IDT?-?INTE | 集成电路 |
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QS3VH125QG8 Datasheet Description The M/A-COM MASWSS0049 is a GaAs monolithic switch in a low cost, FQFP-N, surface mount plastic package. The MASWSS0049 is ideally suited for applications where very low power consumption, high power handling, and low cost are required. The MASWSS0049 includes an integrated decoder and a low loss diplexer. The switch offers GSM power handling with below +2.5V control voltage. The supply voltage VDD should be connected to the highest available voltage. QS3VH125QG8 Price that is less than or equal to it. For greater precision, the value of RSET may also be calculated using the ILIM RSET product found in the chart "RSET coeffi- cient vs. ILIM". The maximum current is derived by multiplying the typical current for the chosen RSET in the chart by l.25. A few standard resistor values are listed in the table "Current Limit RSET Values". QS3VH125QG8 on stock Collector to Emitter VCE(sat) IC=-50mA,IB=-5mA Saturation Voltage Gain-Bandwidth Product fT VCE=-6V'iC=-lmA 100 Output Capacitance cob VCB=-lOV'f=lMHz 5.0 Collector to Base V(BR)CBO IC=.lOuA,IE=O -55 Breakdown Volta8e Collector to Emitter V(BR)CEO ' IC=.lmA,RBE=co -50 Breakdown Voltage Emitter to Base V(BR)EBO IE=-lOuA'IC=O -5 Breakdown Voltage
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