COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or standby mode depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the Command Definitions table (1/08 - 1/015 are don't care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address locations used in the command sequences are not affected by entering the command sequences.
QS3L383S0 Price| Pin | Symbol | unction |
| 1 | VIN | Input voltage pin - should be decoupled with l~F or greater capacitor. |
| 2 | GND | Ground connection pin |
| 3 | EN | Enable pin - pin is internally pulled high. When pulled low the PMOS pass transistor turns off and the device enters low-power mode, consuming less than l.oA. |
| 4 | BYP | Bypass capacitor connection -- to improve AC ripple rejection, connect a lnF capacitor to GND. This will also provide a soft start function. |
| 5 | OUT | Output pin - should be decoupled with 2.2~F or greater output capacitor. See Detailed Description section for further information. |
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QS3L383S0 on stock| | | _- | RejA = 33.32+ 23.84/(0.268+Area) EQ.2 RejA = 33.32+ 154/(1.73+Area) EQ.3 |
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