| | Parameter | Max | Units |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| lc@Tc= 25C | Continuous Collector Current | 12 | A |
| lc @ Tc = 1000C | Continuous Collector Current | 6 0 |
| ICM | Pulsed Collector Current | 24 |
| ILM | Clamped Inductive Load Current Oi | 24 |
| IF@Tc= 25C | Diode Continuous Forward Current | 12 |
| IF Tc = 1000C | Diode Continuous Forward Current | 6 0 |
| IFM | Diode Maximum Forward Current | 24 |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| PD@Tc= 25C | Maximum Power Dissipation | 89 | |
| PD @ Tc = 1000C | Maximum Power Dissipation | 36 | W |
| TJ TSTG | Operating Junction and Storaqe Temperature Ranqe | -55 to +150 | oC |
| | Solderinq Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
| Mountina Toraue. 6-32 0r M3 Screw. | 10 lbf-in (1.1 N-ml | |
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