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QS32X861QT Datasheet

~ataRetentionCharacteristics-LiVersionOnly(T,x_~550Cto+1250C) '] - Parameter Symbol TestCondition min typ max Unit ~- VccforDataRetention VDR ~S~4>Vcc0.2V 2.0 - 5.5 V DataRetentionCurrent ICCDR VCC=3.OV, S~4>Vcc-0.2V, 0.2V>VIN>VCC.0.2V . 0.8 mA ChipDeselecttoDataRetention tCDR SeeRetentionWaveform 0 . . ns OperationRecoveryTime tR SeeRetentionWaveform 5 . - ms
QS32X861QT Price

IIII Vr-t- = 15 V

voC= Vref

1. L;T = U.Ul l11- - RT = 1fl k().

''I ' - "-- - 2. CT = 0.001 yF

HT= 30 kS2

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MINI-14S NTES, 1. THE INSIDE RADIU SF ALL 14 HALF HLES AT THE PERIMETER F THE B4\R ARE SLDER PLATED -r PRVrDE A SURFACE FR THE HTTHCHMENTF THE VC T H MTHERBARD, IN LL LCATINS, virTH 3 PADS BEING USED FR ELECTRMECHHNICAL LNTERFACE. L4 SLDER LCATNS REQUIRED. RM a. THE SURFACEF- THE SHLELD IS TIN PLATE 415-0062REV.B (J -,,,S_R nGE FROM g157YnBnEt SnOA~DrERMErD TiO.r_ no - (DRAWING NOT TO SCALE) Ul Ul Ul o Ln -l- I l l

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