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QS3251QZQ137 Datasheet

ICHGF Battery Charge Current During Fast Recharge q 11 16 21 mA
ICHGT User-Programmable Trickle Charge Current Range q 0.05 2 mA
ORECH Fast Recharge Factor (Note 6) 1.35 1.6 1.85 C/C
OTRK Nominal Trickle Charge Multiplier Factor ICHGT= ImA q 8 10 12 Nh
VCTL(CLAMP) CTL Clamp Voltage in Trickle Mode ICHGT= ImA q 0.45 0.5 0.55 V


QS3251QZQ137 Price

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb=250C ID 600 mA
Pulsed Drain Current IDM 8 A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb=250C Ptot 0.7 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 oc


QS3251QZQ137 on stock
I DESCRIPTION The BH62UV1600 is a high performance, ultra low power CMOS Static Random Access Memory organized as 2,048K by 8 bits and operates in a wide range of l.65V t0 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of l.5mA at 1MHz at 3.6V/250C and maximum access time of 70ns at l.8V/850C. Easy memory expansion is provided by an active LOW chip enable (CEl), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers. The BH62UV1600 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BH62UV1600 is made with two chips of 8Mbit SRAM by stacked multi-chip-package. The BH62UV1600 is available 48-ball BGA package.
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