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QS3244SO8 Datasheet

W963L6ABN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175 Um process technology; W963L6ABN delivers fast access cycle time and low power consumption. It is suitable for mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and power dissipation is most concerned.
QS3244SO8 Price

The lC includes also a programmable soft-start, slope compensation for stable operation at duty cycles greater then 50%, a disable function, a leading edge blanking on current sense to improve noise immunity, latched disable for OVP or OTP shutdown and an effective two-level OCP able to protect the system even in case the secondary diode fails short.
QS3244SO8 on stock

Pin No.	Function
AO-A8	Address Inputs
RAS	Row Address Strobe
OE	Output Enable
1101-1/04	Data Input/Output
CAS	Column Address Strobe
WE	Read/Write Input
Vcc	Power Supply (+ 5 V)
Vss	Ground fo V)
NC.	No Connection

Symbol	Parameter	Conditions	Typical (Note 4)	LM4040AIM3 Limits (Note 5)	LM4040BIM3 Limits (Note 5)	LM4040CIM3 Limits (Note 5)	Units ( Limit)
VR	Reverse Breakdown Voltage	IR= 100cCA	2.500				V
VR	Reverse Breakdown Voltage Tolerance	IR= 100cCA		+2.5 ±19	+5.0 ±21	±12 ±29	mV (max) mV (max)
IRMIN	Minimum Operating Current		45	60 65	60 65	60 65	A (max) (max)
CVR	Average Reverse Breakdown Voltage Temperature Coefficient	IR = 10mA IR = 1mA IR = 100cCA	20 15 15	100	100	100	ppm/IC ppm/IC (max) ppm/IC (max)
CVR/CIR	Reverse Breakdown Voltage Change with Operating Current Change	IRMIN " IR lmA	0.3	0.8 1.0	0.8 1.0	0.8 1.0	mV mV (max) mV (max)
CVR/CIR		1mAIR 15mA	2.5	0.6 8.0	0.6 8.0	0.6 8.0	mV mV (max) mV (max)
zR	Reverse Dynamic Impedance	IR = 1mA, f = 120Hz IAC = 0.1 IR	0.3	0.8	0.8	0.9	l l(max)
eN	Wideband Noise	IR = 100cCA 10Hz " f" 10kHz	35				cd/RMS
R	Reverse Breakdown Voltage Long Term Stability	t = 1000hrs T = 25IC +O.1IC lra = 100ccA	120				ppm
Symbol	Parameter	Conditions	Typical (Note 4)	LM4040DIM3 Limits (Note 5)			Units ( Limit)
VR	Reverse Breakdown Voltage	IR= 100cCA	2.500				V
VR	Reverse Breakdown Voltage Tolerance	IR= 100cCA		+25 ±49			mV (max) mV (max)
IRMIN	Minimum Operating Current		45	65 70			ccA (max) q(max)
R	Average Reverse Breakdown Voltage Temperature Coefficient	IR = 10mA IR = 1mA IR = 100cCA	20 15 15	150			ppm/lC ppm/IC (max) ppm/IC (max)
q;VR/21R	Reverse Breakdown Voltage Change with Operating Current Change	IRMIN " IR lmA	0.3	1.0 1.2			mV mV (max) mV (max)
q;VR/21R		1mAIR 15mA	2.5	8.0 10.0			mV mV (max) mV (max)
zR	Reverse Dynamic Impedance	IR = 1mA, f = 120Hz IAC = 0.1 IR	0.3	1.1			l l(max)
eN	Wideband Noise	IR = 100cCA 10Hz " f" 10kHz	35				c~VRMS
R	Reverse Breakdown Voltage Long Term Stability	t = 1000hrs T = 25IC +O.1IC IR = 100cCA	120				ppm

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