AD > Map-14 > QS29FCT52CTHB

QS29FCT52CTHB，there are the best QS29FCT52CTHB suppiers all over the world here.These are the list and detailed contact method of QS29FCT52CTHB suppliers all over the world as follows.You can buy or get informations of QS29FCT52CTHB through email , message or tel.

suppliers of QS29FCT52CTHB and PDF data of QS29FCT52CTHB

Part Numbert

Mfg

Packt

D/C

Descriptiont

Qty

Company/Contact

QS29FCT52CTHB Datasheet

l l 1200

1800

900

j

=30<

j

|

j

F

j

J

j

r

|

j

j

7

RECTANGULAR

f

WAVEFORM (ONE CELL)

_360:

CONDUCTION ANGLE

QS29FCT52CTHB Price

Parameter	Symbol	Condition	MIN	TYP	MAX	Unit
Collector Cutoff Current	ICBO	VCB=5 V IE=0			2.5	oA
Emitter Cutoff Current	IEBO	VEB = 1 V, le = 0			2.5
DC Current Gain	hFE	VCE = 3.6 V, le = 100 mANote	60
Output Power	P-i	Vcc = 3.6 V, f = 1.9 GHz,	23	24		dBm
Power Gain	GP	ICq = 1 mA (class AB operation)	7	8		dB
Collector Efficiency	Tlc	Duty factor l/8	50	60		%

QS29FCT52CTHB on stock

			2N5018		2N5019
SYM	CHARACTERISTIC	TYP	MIN	MAX	MIN	MAX	UNITS	CONDITIONS
BVGSS	Gate to Source Breakdown Voltage		30		30		V	IG = 1hjA, VDS = OV
VGS(off)	Gate to Source Cutoff Voltage			10		5		VDS = -15V, ID = -1pA
				-0.5				VGS = OV, ID = -6mA
VDS(on)	Drain to Source On Voltage					-0.5		VGS = OV, ID = -3mA
IDSS	Drain to Source Saturation Current2		-10		5		mA	VDS = -20V, VGS = OV
IGSS	Gate Leakage Current			2		2	nA	VGS = 15V, VDS = OV
				-10		-10	nA	VDS = -15V, VGS = 12V
ID(off)	Drain Cutoff Current			-10		-10	UA	VDS = -15V, VGS = 7V
IDGO	Drain Reverse Current			2		2	nA	VDG = -15V, IS = OA
rDScon)	Drain to Source On Resistance			75		150	Q	ID = -1mA, VGS = OV

Wave						ength
						1		IF = 20m
								ATa= 250C

					I
					l		I
					\|		l
				j			l
				j
			j