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QS29FCT520CTSO Datasheet

PARAMETER	SYMBOL	MIN	TYP	MAX	UNIT	TEST CONDITION
Average Luminous Intensity	IV	800	2200		mcd	IF= 10 mA
Peak Emission Wavelength	A,p/Hue		565/569		nm	IF= 20 mA
Spectral Line Half-Width			30		nm	IF= 20 mA
Forward Voltage, Per Segment	VF		2.1	2.6	V	IF= 20 mA
Reverse Current, Per Segment	IR			100	mA	VR= SV
Luminous Intensity Matching Ratic	Iv_m			21		IF= 10 mA

QS29FCT520CTSO Price

Valid for SM8951A/8952A
X'tal	3MHz	6MHz	9MHz	12MHz
C1	30 pF	30 pF	30 pF	30 pF
C2	30 pF	30 pF	30 pF	30 pF
R	open	open	open	open

X'tal	16MHz	25MHz	33MHz	40MHz
C1	30 pF	15 pF	5pF	2pF
C2	30 pF	15 pF	5pF	2pF
R	open	62KI	6.8KI	4.7KI

QS29FCT520CTSO on stock

NOTE: 1. Timing is over recommended temperature and power supply voltages. 2. Typical figures are at 250C and are for design aid only; not guaranteed and not subject to production testing. 3. Contents of Connection Memory are not lost if the clock stops, however, TX output go into the high impedance state

DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resul- ting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high effi- ciency are of paramount importance.

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