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Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  
QS29FCT2520CTSO QSI  器件原封装  06+  【原装订货,5-10天,飞乐飞公司诚心为  650 
    ShenZhen Happy Fly
  • Contact:Teo
  • Tel:86-0755-82244323
  • Fax:
  • Email: sales@icvgo.com
QS29FCT2520CTSO Quality Semi        650 
    HuaKe Optoelectronics(ASIA) co..
  • Contact:Bob
  • Tel:86-755-83553014
  • Fax:
  • Email: Bob_hu@huake-hk.com
QS29FCT2520CTSO QS    n/a  全新原装现货热卖  2139 
    SHENZHENZHIRUIXINTECHNOLOGYCO...
  • Contact:Ms.LynnHou
  • Tel:0086-755-83213956/83213971
  • Fax:0086-755-83213973
  • Email: szzrx2@yahoo.com.cn

QS29FCT2520CTSO Datasheet
- 15 VaxTM_MIPS (Dhrystone~) at 18 MHz s ARM710a microprocessor - ARM7 CPU - 8 Kbytes of four-way set-associative cache - MMU with 64-entry TLB (transition look-aside buffer) s DRAM controller - Supports both 16- and 32-bit-wide DRAMs s ROM/SRAM/flash memory control
QS29FCT2520CTSO Price
Notes: [l] Clock timing references use 0.85Vce for a logic I and 0.8V for a logic O {2J Timing references use 2.OV for a logic l and 0.8V for a logic O. [3] Interrupt references request through Port 3. [4] Interrupt request through Port 3 (P33-P31). Dl Iruerrupt request lhrough Port 30.
QS29FCT2520CTSO on stock

- = Ci SS
j
OSS - -KI
l\
C h= 50r J
= 1 v1 Hz l l l l
- J( JGS= OV l l


Characteristic Symbol Max Units
Total Device Dissipation FR- 5 Board(l) TA = 250C Derate above 250C PD 225 1.8 mW m W/oC
Thermal Resistance, Junction to Ambient RejA 556 0 c/w
Total Device Dissipation Alumina Substrate,(2) TA = 250C Derate above 250C PD 300 2.4 mW m W/oC
Thermal Resistance, Junction to Ambient RejA 417 o c/w
Junction and Storage Temperature Tj, Tsta -55 to +150 oc