QRE121J333Y Datasheet I SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. QRE121J333Y Price| AO-A16 | Address Inputs | | DQO-DQ7 | Data Input/Output | | E1 | Chip Enable | | E2 | Chip Enable | | G | Output Enable | | | Write Enable | | Vcc | Supply Voltage | | Vss | Ground | | |
QRE121J333Y on stock| Electrodes | K | G | Dyl | Dy2 | Dy3 | Dy4 | Dy5 | Dy6 | Dy7 | Dy8 | Dy9 | Dyl0 | D | | Ratio | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
| Parameter | Symbol | Value | Unit | | Continuous drain current TC = 25 aC TC = 100 0C | D | 1 1 7 | A | | Pulsed drain current, tp limited by Tjmax | D puls | 33 | | Avalanche energy, single pulse /D = 5.5 A, VDD = 50 V | EAS | 340 | mJ | | Avalanche energy, repetitive tAR limited by Tjmaxi /D = 11 A, VDD = 50 V | EAR | 0.6 | | Avalanche current, repetitive tAR limited by Tjmax | /AR | 1 1 | A | | Reverse diode dvldt /S=11A, VDS=480V, Tj=1250C | d vldt | 6 | V/ns | | Gate source voltage static | VGS | +20 | V | | Gate source voltage AC (f >1Hz) | VGS | +30 | | Power dissipation, TC = 250C | Ptot | 1 25 | W | | Operating and storage temperature | TiTstq | ·55+150 | aC | | | | |
|
