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QR8018610 Datasheet

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~ 0 7p
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QR8018610 Price
(+) CPD iS defned as the value ofthe lC's internal eqjivalent capaatance which is calculated from the operating current consumption without load (Refer to Test Circuit). Average operting current can be obtained by the following equation. Icc(opr) = CPD ccVCCIN + Icc/8 (per gate)
QR8018610 on stock

Ti=-55C |j
250C I?
151 ]c > fj
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Limits
Symbol Parameter Test Conditions Min Typ Max Unit
Static
VfBRIDSS Drain-Source breakdown Voltage VGS=OV, ID=-250uA -30 V
VGS(th) Gate-Threshold Voltage VDS= VGS, ID=-250uA 1 -1.6 3 V
IGSS Gate-Body Leakage VDS=OV, VGS=+25V +100 nA
VDS=-24V, VGS=OV 1
IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=OV, TJ=550C 5 uA
ID(on) On-State Drain Current (Note 3) VDS=-5V, VGS=-10V -50 A
VGS=-10V, ID=-11.5A 10 13
VGS=-4.5V, ID=-9.3A 15 19.0
rDScon) Drain-Source On-Resistance (Note 3) VGS=-10V, ID=-13A, TJ=550C 11 13 mQ
9fs Forward Tranconductance (Note 3) VGS=-15V, ID=-11.5A 29 S
VSD Diode Forward Voltage ls=2.5A, VGS=OV -0.8 -1.2 V
Dynamic (Note 4)
Qa Total Gate Charge VDS=-15V, VGS=-10V, 64 100
Qqs Gate-Source Charge ID=-11.5A 11 nC
Qqd Gate-Drain Charge 17
Switching
td(on) Turn-On Delay Time 15 25
t Rise Time VDD=-15, RL=6Q, 13 20 nS
td(off) Turn-Off Delay Time ID=-1A, VGEN=-10V 100 152
tf Fall-Time 54 81