| SYMBOL | PARAMETER | CONDITIONS | NOTES | TA = 25IC MIN TYP MAX | SUB- GROUP | -55IC " TA " i2src MIN TYP MAX | SUB- GROUP | UNITS |
| Vos | Input Offset Voltage | | 1 | 100 | 4 | 300 | 2.3 | |
| CVos clremp | Average Offset Drift | | 4.7 | | | 1.8 | | rfC |
| CVos clrime | Long-Term Input Offset Voltage Stability | | 2.4 | 2 | | | | cc\//Month |
| los | Input Offset Current | | | 75 | 1 | 135 | 2.3 | nA |
| lB | Input Bias Current | | | +80 | 1 | +150 | 2.3 | nA |
| | | | | | | | |
Features General Description , 4096 8-bit bytes (32K) The GTE G2332 Read Onl.l Memory is a 4096 word by 8 bit device with a maximum access time of 350 nanoseconds * Maximum Active Current: 100 mA (G2332-3) or 450 nanoseconds (G2332-4) The G2332 ROM is ~ Max. access time: 350 nS-G2332-3 a mask-programmable, byte-organized memory designed for 450 nS-G2332-4 use in bus-oriented applications with all 8-bit N-channel micro * Output drive: one TTL load, plus 100 pF processors. Dual Chip Select inputs provide convenient memory expansion-allowing up to four G2332 32K ROMs to be OR-tied ~ All input/outputs TTL compatible without external coding In addiiion, three-state output buffers allow simple parallel-busing for memor\r expansion The G2332 . Two programmable Chip Select inputs is TTL compatible, requires only a single5V power supply, * Three-state outputs for memory expansion requiring no external clocks and no refresh circuitW. Packaging is standard 24-pin plastic or cerdip. ~ Single +5V power supply, +5 percent ' Standard 24-pin plastic or cerdip package
