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QM40-8R-EP Datasheet

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.


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Range Ambient Temperature vcc
Commercial -40IC to +85IC 5V±5%
Military -55IC to +125IC 5V±10%


QM40-8R-EP on stock
The second amplifier, RFA2, provides 51 dB of gain below satura- tion. The output of RFA2 drives a full-wave detector with 19 dB of threshold gain. The onset of saturation in each section of RFA2 is detected and summed to provide a logarithmic response. This is added to the output of the full-wave detector to produce an overall detector response that is square law for low signal levels, and tran- sitions into a log response for high signal levels. This combination provides excellent threshold sensitivity and more than 70 dB of detector dynamic range. In combination with the 30 dB of AGC

SYMBOL PARAMETER CONDITIONS TEST CIRCUIT MIN TYP. MAX UNIT
Vs Reset detection threshold Vs - 2% Vs Vs +2% V
CVs Hysteresis VDD = 0 V VS +1.0 V} 0 V VS×0.03 VS×0.05 VS×0.08 V
vsior Threshold voltage temperature coefficient -40 IC " Tamb " +85 IC 1 Fig16 +0 .01 %/YC
lcc Supply current VDD= VS +1.0 V 0 25 1 0
IOH IDS leakage current when OFF VDD = VDS = 10 V 3 Fig18 0 1
lNDS1 N-channel IDS output sink current 1 VDD = 1.2 V; VDS = 0.5 V -0.23 -1.4 mA
lNDS2 N-channel IDS output sink current 2 (for Vs > 2.6 V) VDS = 0.5 V; VDD = 2.4 V 2 Fig17 -1.6 -8.3 mA
INDS3 N-channel IDS output sink current 3 (for Vs > 3.9 V) VDS = 0.5 V; VDD = 3.6 V -3.2 -14.7 mA
IPDS1 P-channel IDS output source current 1 (for Vs < 4.0 V) VDS = 0.5 V; VDD = 4.8 V 0 36 2 1 mA
IPDS2 P-channel IDS output source current 2 (for Vs < 5.7 V) VDS = 0.5 V; VDD = 6.0 V; 4.0 V < Vs < 5.7 V 3 Fig18 0 46 2 5 mA
IPDS3 P-channel IDS output source current 3 (for Vs < 5.7 V) VDS = 0.5 V; VDD = 8.4 V 0 59 3 3 mA