ADMap-16  > QM40-8PL-PR

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QM40-8PL-PR Datasheet

UNIT A Ai max. bp c D E e e1 HE Lp Q V W
mm 1 1 0 9 0 1 0 48 0 38 0 15 0 09 3 0 2 8 1 4 1 2 1 9 0 95 2 5 2 1 0 45 0 15 0 55 0 45 0 2 0 1


QM40-8PL-PR Price

Parameters Values Units Conditions
IF(AV, Max.AverageForward (PerLeg) 40 A 50%duty cycle@Te=1110C,rectangularwave form
Current (PerDevice) 80
IFSM Max.PeakOneCycleNon-Repetitive 1600 A 5ps Sineor3ljsRect.pulse Followinc4:-any rated load conaition and with
SurgeCurrent(PerLeg) 500 10msSineor6msRect.pulse rated VRRM applied
EAS Non-RepetitiveAvalancheEnergy (PerLeg) 50 mJ Tj=250C,l,xs=8Amps,L=1.5mH
IAR RepetitiveAvalancheCurrent (PerLeg) 8 A Current decaying linearly to zero in l psec Frequency limited by Tj max. VA = 1.5 x VR typical


QM40-8PL-PR on stock
To drive the device from an external clock source, XTALl should be driven while XTAL2 is left unconnected. There are no requirements on the duty cycle of the external clock signal, because the input to the internal clock circuitry is through a divide-by-two flip-flop. However, minimum and maximum high and low times specified in the data sheet must be observed.

Parameter Symbol Values Unit
Collector-emitter voltage E 1 200 V
Collector-gate voltage RGE = 20 k] VCGR 1 200
Gate-emitter voltage E ±20
DC collector current Tc = 25 aC Tc = 100 0C lc 20 1 2 A
Pulsed collector current, tp = 1 ms Tc = 25 aC /Cpuls 40
Diode forward current Tc = 100 aC F tbd
Pulsed diode current, tp = 1 ms Tc = 25 aC /Fpuls tbd
Power dissipation Tc = 25 aC Ptot 1 25 W
Chip or operating temperature Tj -55+150 aC
Storage temperature Tstg -55+150