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QM30-14PL-CFI Datasheet

Parameter Symbol Conditions Values Unit
min typ. max
Inverse diode continuous forward current s Tc=250C 1.8 A
Inverse diode direct current, pulsed /SM 3.2
Inverse diode forward voltage VSD VGS=OV, /F=/S 1 1.2 V
Reverse recovery time trr VR=350V, /F=/S , 860 1 460 ns
Reverse recovery charge Qrr diF/df=lOOA/ps 1.6 IJC


QM30-14PL-CFI Price
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE 3. OE may be delayed up to tACC - tOE after the address is valid without impact on tACC 4. This parameter is only sampled and is not 100% tested. 5. Output float is defined as the point when data is no longer driven.
QM30-14PL-CFI on stock

Symbol Parameter Test Conditions Min Typ. Max Unit
ISD ISDM( Source-drain Current Source-drain Current (pulsed) 33 132 A A
VsD Forward On Voltage ISD = 33 A VGS = 0 1.6 V
trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 33 A di/dt = 100 A/ccs VDD = 50 V Tj = 150 0C (see test circuit, figure 5) 140 0.7 10 ns ccC A


Item SymboJ Condition mm typ max. Unit
ICBO VCR= +60V, IE-O ±200 vA
]LLi ICFO VCE = +30V, IB = O ±500 vA
vFL+f IEBO VEB - +5V, IC = O ±2 mA
j p· vcl::o lc = +30mA, IB= O ±60 V
hFEl VCE = +3V, Ic - +0.5A 1000
i hFE2 VCE= +3V, lc = +3A 1000 10000
-- VBf: VCE = +3V, Ic = +3A ±2.5 V
j p· VCE (sa0 Ic - +3A, lB= +12mA ±2 v
fT VCE=+lOVtIC-+0.5A, f=lMHz 20 MHz
' to (typ.) NPN:0.5, PNP:0.3 S
tstNt Ic = +3A, IHI= +12mA, IBZ =12mA (typ.) NPN:4, PNP: 2 S
FH tf (typ.) NPN:1, PNP:0.5 S