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QM1458-1ES Datasheet

its performance. Excessive ringing due to reflections caused by improperly terminated signal lines makes it difficult for the component receiving these signals to decipher the proper logic levels and can cause transi- tions to occur where none were intended. Also, by min- imizing high-frequency ringing, possible EMI problems can be avoided.
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Symbol	Parameter	Conditions	Ratings	Unit
VDSS	Drain-source voltage	VGS= OV	700	v
VGSS	Gate-source voltage	VDS= OV	±30	v
ID	Drain current		7	A
IDM	Drain current (Pulsed)		21	A
PD	Maximum power dissipation		125	W
Tch	Channel temperature		-55+150	]_C
Tstg	Storage temperature		-55+150	]_C
	Weight	Typical value	112	g

QM1458-1ES on stock

The amplifier chain should be as shown in the various figures in this datasheet. It should have 2 stages of gain, totaling about 100 +/-20%. Numerous opamps are available that will perform to requirements, including the TI TLC2272 and the Analog Devices OPA2340. The opamps should have at least a rail-to-rail CMOS output, and an input that can sense from ground to at least +1 volt. The recommended GBW is 2MHz or above. To reduce leakage current problems the amplifier should be a JFET or CMOS input type only.


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