| MICROSEMI PART NUMBER | REVERSE STAND-OFF VOLTAGE VWM | BREAKDOWN VOLTAGE V(BR) @I(BR) Volts | MAXIMUM CLAMPING VOLTAGE @ IPP | PEAK PULSE CURRENT (See Fig. 2) IPP | MAXIMUM STANDBY CURRENT @ VWM |
| GULL-WING LEAD | MODIFIED "J" BEND LEAD | Volts | MIN. MAX. | I(BR) mA | Volts | Amps | ID |
| SMBG48 SMBG48A SMBG51 SMBG51A | SMBJ48 SMBJ48A SMBJ51 SMBJ51A | 48 48 51 51 | 53.3 - 65.1 53.3 - 58.9 56.7 - 69.3 56.7 - 62.7 | 1 1 1 1 | 85.5 77.4 91.1 82.4 | 7.0 7.7 6.6 7.3 | 5 5 5 5 |
| SMBG54 SMBG54A SMBG58 SMBG58A | SMBJ54 SMBJ54A SMBJ58 SMBJ58A | 54 54 58 58 | 60.0 - 73.3 60.0 - 66.3 64.4 - 78.7 64.4 - 71.2 | 1 1 1 1 | 96.3 87.1 103.0 93.6 | 6.2 6.9 5.8 6.4 | 5 5 5 5 |
| SMBG60 SMBG60A SMBG64 SMBG64A | SMBJ60 SMBJ60A SMBJ64 SMBJ64A | 60 60 64 64 | 66.7 - 81.5 66.7 - 73.7 71.1 - 86.9 71.1 - 78.6 | 1 1 1 1 | 107.0 96.8 114.0 103.0 | 5.6 6.2 5.3 5.8 | 5 5 5 5 |
| SMBG70 SMBG70A SMBG75 SMBG75A | SMBJ70 SMBJ70A SMBJ75 SMBJ75A | 70 70 75 75 | 77.8 - 95.1 77.8 - 86.0 83.3 - 102.0 83.3 - 92.1 | 1 1 1 1 | 125 113 134 121 | 4.8 5.3 4.5 4.9 | 5 5 5 5 |
| SMBG78 SMBG78A SMBG85 SMBG85A | SMBJ78 SMBJ78A SMBJ85 SMBJ85A | 78 78 85 85 | 86.7 - 106.0 86.7 - 95.8 94.4 - 115.0 94.4 - 104.0 | 1 1 1 1 | 139 126 151 137 | 4.3 4.7 3.9 4.4 | 5 5 5 5 |
| SMBG90 SMBG90A SMBG100 SMBG100A | SMBJ90 SMBJ90A SMBJ100 SMBJ100A | 90 90 100 100 | 100 - 122 100 - 111 111 - 136 111 - 123 | 1 1 1 1 | 160 146 179 162 | 3.8 4.1 3.4 3.7 | 5 5 5 5 |
| SMBG110 SMBG110A SMBG120 SMBG120A | SMBJ110 SMBJ110A SMBJ120 SMBJ120A | 110 110 120 120 | 122 - 149 122 - 135 133 - 163 133 - 147 | 1 1 1 1 | 196 177 214 193 | 3.0 3.4 2.8 3.1 | 5 5 5 5 |
| SMBG130 SMBG130A SMBG150 SMBG150A | SMBJ130 SMBJ130A SMBJ150 SMBJ150A | 130 130 150 150 | 144 - 176 144 - 159 167 - 204 167 - 185 | 1 1 1 1 | 231 209 268 243 | 2.6 2.9 2.2 2.5 | 5 5 5 5 |
| SMBG160 SMBG160A SMBG170 SMBG170A | SMBJ160 SMBJ160A SMBJ170 SMBJ170A | 160 160 170 170 | 178 - 218 178 - 197 189 - 231 189 - 209 | 1 1 1 1 | 287 259 304 275 | 2.1 2.3 2.0 2.2 | 5 5 5 5 |
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Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance