| | SB820 | SB830 | SB840 | SB850 | SB860 | SB880 | SB8100 | UNITf |
| Maximum Recurrent Peak Reverse Voltaqe | 20 | 30 | 40 | 50 | 60 | 80 | 1 00 | V |
| Maximum RMS Voltaqe | 1 4 | 21 | 26 | 35 | 42 | 56 | 80 | V |
| Maximum DC Blockinq Voltaqe | 20 | 30 | 40 | 50 | 60 | 80 | 1 00 | V |
| Maximum Average Forward Rectified Current at Tc=100 CJ | 8O | A |
| Peak Forward Surge Current, 8.3ms single half sine wave superimposed on rated load(J EDEC method) | 1 50 | A |
| Maximum Forward Voltaqe at 8.OA per element | O55 | 0.75 | 0.85 | V |
| Maximum DC Reverse Current at Rated Tc=25 CJ DC Blocking Voltage per element Tc=100 CJ | O5 50 | mA |
| Typical Thermal Resistance Note R ~KJA | 60 | CJ/W |
| Operating and Storage Temperature Range TJ | -50 TO +125 | |
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| E111f | | | | | | |
| G | SmaIISignaIPowerGain | f = 0 1 -1 0 G H z f = 1 0-2 0 G H z f = 2 0-3 0 G H z | dB dB dB | 1 8 0 1 6 0 1 5 0 | 2 0 0 1 8 0 1 7 0 | |
| G | GainFlatness | f=0120GHz | dB | | +1 0 | |
| BW3dB | 3 d B B a n d w id th | | GHz | | 3 0 | |
| PidB | OutputPoweratldBCompression | f=20GHz | dBm | | 1 8 0 | |
| NF | N oise Figure | f=20GHz | dB | | 4 2 | 5 0 |
| VSWR | Input / O utput | f=0180GHz | | | 1 51 | |
| l P 3 | ThirdOrderlnterceptPoint | f=20GHz | dBm | | 3 4 0 | |
| T | G ro up D ela V | f=20GHz | | | 1 2 0 | |
| ISOL | Reverselsolation | f=0180GHz | dB | | 2 2 0 | |
| VD | Device Voltage | | V | 4 3 | 5 0 | 5 7 |
| dG/dT | D evice G ain Te m p e ra tu re C o e fficie n t | | dBldegC | | 0 0 0 2 7 | |
| d Vld T | D evice Volta g e Te m p e ra tu re C o e fficie n t | | m Vld e o C | | 5 0 | |
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Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.