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NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals must be active to initiate a wnte and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5.lf the CE low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuouslylow (OE = VIL ). 7. Dour iS the same phase of write data of this wnte cycle. 8. Dour iS the read data of next address. 9. If CE is low dunng this penod, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. Transition is measured+500mV from steady state with CL = 5pF as shown in Figure lB The parameter is guaranteed but not 100% tested. 11. Tcwis measured from the later of CE going low to the end of write.
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