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PC1602LRUKSOHY2 PC1602LRUKSOHY2 PC1602LRUKSOHY2 Datasheet

0 100 200 300 400 500 600 0 100 200 300 400 500 600 0 100 200 300 400 500 600 INPUT FREOUENCY (MHz) INPUT FREOUENCY (MHz) INPUT FREOUENCY (MHz) 2230 G03 2230 G04 2230 G05 22301p
PC1602LRUKSOHY2 PC1602LRUKSOHY2 PC1602LRUKSOHY2 Price


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PC1602LRUKSOHY2 PC1602LRUKSOHY2 PC1602LRUKSOHY2 on stock

Characteristics	Symbol		Max	Units
Thermal Resistance, Junction to Case	ROJ_C	Per Module, both conducting	O175	oC/w
Thermal Resistance, Junction to Case	ROJ_C	Per Junction, both conducting	O35	oc/w

Collector-Emitter Voltage (G-E SHORT) VCES		1200		Volts
Gate-Emitter Voltage VGES		+20		Volts
Collector Current lc		75	Amperes
Peak Collector Current ICM		150*	Amperes
Diode Forward Current IF		75	Amperes
Diode Forward Surge Current IFM		150*	Amperes
Power Dissipation Pd		600		Watts
Max. Mounting Torque M5 Terminal Screws		17		in-lb
Max. Mounting Torque M6 Mounting Screws		26		in-lb
Module Weight (Typical)		190		Grams
V Isolation VRMS		2500		Volts
' Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min	Typ	Max	Units
Collector-Cutoff Current ICES VCE = VCES,VGE = OV			1.0	mA
Gate Leakage Current IGES VGE = VGES, VCE = OV			0 5
Gate-Emitter Threshold Voltage VGE(th) lC = 7.5mA, VCE = 10V	4.5	6.0	7.5	Volts
Collector-Emitter Saturation Voltage VCE(sat) lC = 75A, VGE = 15V		2.5	3.4¨	Volts
lc = 75A, VGE = 15V, Tj = 150IC		2 25		Volts
Total Gate Charge QG VCC = 600V, lc = 75A, VGS = 15V		375		nC
Diode Forward Voltage VFM IE = 75A, VGS = OV			3.5	Volts
" Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 1C unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units
Input Capacitance Cies			15	nF
Output Capacitance Coes VGE = OV, VCE = iov f = 1MHz			5.3	nF
Reverse Transfer Capacitance Cres			3	nF
Resistive Turn-on Delay Time td(on)			150	ns
Load Rise Time tr VCC = 600V,lc = 75A,			350	ns
Switching Turn-off Delay Time td(off) VGEl = VGE2 = 15V, RG = 4.2 I			250	ns
Times FaIITime tf			350	ns
Diode Reverse Recovery Time trr IE = 75A, diE/dt = -150A/os			250	ns
Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = -150A/os		0 56		c
Thermal and Mechanical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units

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