The device is erased by executing the Erase command sequence; the device internally con- trols the erase operation. The memory is divided into four blocks for erase operations. There are tw0 4K word parameter block sections, the boot block, and the main memory array block. The typical number of program and erase cycles is in excess of 10,000 cycles.
PC1601LRMASC0 PC1601LRMASC0 PC1601LRMASC0 on stock| SYMBOL | TEST CONDITIONS | MINIMUM | TYPICAL | MAXIMUM | UNITS |
| BVCBO | lc =10 mA | 65 | | | V |
| BVCES | lc =10 mA | 65 | | | v |
| BVCEO | lc= 25 mA | 33 | | | V |
| BVEBO | IE=1.0 mA | 4.0 | | | v |
| hFE | VCE = 5.0 V lC = 100 mA | 1 0 | | | |
| FT | VCE = 5.0 V lC = 200 mA | | 1.2 | | GHz |
| Ce | VCB = 10 V f= 1.0 MHz | | 14 | | pF |
| Ce | VEB = OV f= 1.0 MHz | | 60 | | pF |
| PG T1c | VCE = 28 V POUT= 7.0 W f= 470 MHz | 8.5 60 | 9.0 75 | | dB % |
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| | | | | 25IC | k | -- | | |
| | | | | 251C | | | ) | -5! | jlc |
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