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PC111L(Y2) PC111L(Y2) PC111LY2 Datasheet

Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current MIMA151WATl IR V R = 35 V - 0.1 ccAdc MIMA152WATl V R = 75 V - 0.1
Forward Voltage V F IF = 100 mA - 1.2 Vdc
Reverse Breakdown Voltage MIMA151WATl VR IR = 100 0:A 40 - Vdc MIMA152WAT1 80
Diode Capacitance CD V R= O,f = 1.0 MHz - 2.0 pF
Reverse Recovery Time tr,(2) IF = 10 mA, VR = 6.0 V, - 3.0 ns RL=lOOl,lrr=O.11R


PC111L(Y2) PC111L(Y2) PC111LY2 Price
s Features q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current Ic q N type package enabling direct soldering ofthe radiating fin to the printed circuit board, etc. of small electronic equipment.
ATJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. ATJL = OJL PD For worst-case design, using expected limits of lZ, limits of PD and the extremes of Tj {ATj) may be estimated. Changes in voltage, VZ, can then be found from: AV = OyZ ATj OVZ,the zener voltagetemperature coefficient,is found from Figures 5 and 6. Under high power-pulse operation,the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capa- bility. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction temper- ature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure'3 be exceeded.