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PC-1601LRS-GNH-B Datasheet

CHARACTER,ISTIC		SYMBOL	RATING	UNIT
Collector-Base Voltage		VCBO	-80	V
Collector-Emitter Voltage		VCEO	-80	v
Emitter-Base Voltage		VEBO	-5	V
	DC	IC	-6	A
Collector Current	Pulse	ICP	-12	A
Base Current		IB	- 0.6	A
Collector Power Dissipation (Tc = 25aC)		PC	55	W
Junction Temperature		Tj	150	oC
Storage Temperature Range		Tstg	- 55150	aC

PC-1601LRS-GNH-B Price

Items	Symbols	Test Conditions	Min	Typ	Max	Units
Zero Gate Voltage Collecter Current	ICES	VGE=OV VCE=600V Ti=250C			4 0	mA
Gate-Emitter Leackage Current	IGES	VCE=OV VGE=+20V			200	nA
Gate-Emitter Threshold Voltage	VGE (th)	VCE=20V lc=300mA	3 0		6 0	V
Collecte r-Emitter Satu ratio n Voltage	VCE fsail	VGE=15V lc=300A		2.7	3 5	V
Input Capacitance	Cies	VGE=OV		28500		pF
Output Capacitance	Coes	VCE=10V
Reverse Transfer Capacitance	Cres	f=lMHz
	ton	Vcc=300V		0 7	0 8
Turn-on Time *3	tr	lc=300A		0 4	0 6
	totf	VGE=+1 5V		0 7	1 0
Turn-off Time *4	tf	RG=6.8fl		0 2	0 35
Diode Forward On-Voltage	VF '	IF=300A VGE=OV			2 5	V
' Reverse Recovery Time '	trr	IF=300A -di/dt=900A/ys VGE=-IOV			300	ns

PC-1601LRS-GNH-B on stock

PARAMETER	TEST CONDITIONS~		MIN TYP MAX	UNIT
	VO(AVCC) (5 V)		2 8
tr Rise times, output	VO(AVPP) (12 V)		6
	VO(AVCC) (5 V)		5	ms
tf Fall times, output	VO(AVPP) (12 V)		19	ms
		ton	7
	VI(VPPDO) to VO(AVPP) (12 V)	toff	23
		ton	2 8
tpd Propagation delay (see Figurel)	VI(VCCDl) to VO(AVCC) (3.3 V)	toff	12	ms
		ton	3 7
	VI(VCCDO) to VO(AVCC) (5 V)	toff	13

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