| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNITS |
| Current Turn-On Delay Time | Ld(ON)I | IGBT and Diode at Tj = 1250C | | 27 | | ns |
| Current Rise Time | trl | ICE = 40A VCE = 0.65 BVCES | | 20 | | ns |
| Current Turn-Off Delay Time | od(OFF)l | VGE = 15V RG= 2.21 | | 185 | 225 | ns |
| Current Fall Time | tfl | L = 200DCH | | 55 | 95 | ns |
| Turn-On Energy (Note 2) | ON1 | Test Circuit (Figure 24) | | 400 | | d |
| Turn-On Energy (Note 2) | ON2 | | 1220 | 1400 | d |
| Turn-Off Energy (Note 3) | EOFF | | 700 | 800 | od |
| Diode Forward Voltage | VEC | IEC= 40A | | 2 25 | 2 7 | V |
| Diode Reverse Recovery Time | trr | IEC = 40A, dIEC/dt = 200A/as | | 48 | 55 | ns |
| IEC = 1A, dIEC/dt = 200Abs | | 38 | 45 | ns |
| Thermal Resistance Junction To Case | ROJC | IGBT | | | 0 2 | oCN |
| Diode | | | 1 | oC/w |
| | | | | | |