| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| PBU605 | DIODES/LITEO | 扁桥 | 07+ | 价格优势,厂价直销 | 65000 |
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| PBU605 | DIODES/LITEO | 扁桥 | 07+ | 价格优势,厂价直销 | 65000 |
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| PBU605 | LITEON | 排桥 | 06+ | Qriginal and in our | 80000 |
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| PBU605 | LITEON | 10000 |
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PBU605 Datasheet DESCRIPTION The 2SB1150 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C. It is suitable for use to operate from lC without predriver, such as hammer driver. FEATURES ' High DC Current Gain. ~ Built-in a Zener Diode at B-C and a Dumper Diode at E-C. ~ Low Collector Saturation Voltage. ~ High Power Dissipation: PT = 1.3 W (at Ta = 25 0C) ABSOLUTE MAXIMUM RATtNGS Maximum Temperatures Storage Temperature . . . . . . . . . . . . -55 to +150 aC Junction Temperature . . . . . .., . . . . . .+150 0C Maximum PBU605 Price
PBU605 on stock
(5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. |
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