PBM-2015-605F Datasheet| SYMBOL | PARAMETER | CONDITIONS | MIN TYP MAX | UNITS | | VOs | Input Offset Voltage | VCM = V+ VCM = V- | q q | 200 900 200 900 | ccv | | VOs TC | Input Offset Voltage Drift (Note 8) | VCM = V+ VCM = V- | q q | 1.5 5 1.5 5 | ccV/'fC ccV/IC | | o\/Os | Input Offset Voltage Shift | VCM=VtoV+ | q | 1 00 900 | | | lB | Input Bias Current | VCM = V+- O.lV VCM = V- 0.2V | q q | 1.2 7 -16 -5 | | | CIB | Input Bias Current Shift | VCM = V-+ 0.2V to V+- O.lV | q | 62 23 | | | 10s | Input Offset Current | VCM = V+- O.lV VCM = V- 0.2V | q q | 0.03 1 0.04 2.2 | | | ClOs | Input Offset Current Shift | VCM = V-+ 0.2V to V+- O.lV | q | 0.07 3.2 | | | AVOL | Large Signal Voltage Gain | Vo = -4V t0 4V, RL = lkl VO = -2V t0 2V, RL =iool | q q | 80 175 8 17 | \UmV V/mV | | CMRR | Common Mode Rejection Ratio | VCM=VtoV+ | q | 80 1 00 | dB | | | Input Common Mode Range | | q | v-V+ | V | | PSRR | Power Supply Rejection Ratio | V+= 2.5V t0 10V, VCM = OV | q | 87 105 | dB | | VOL | Output Voltage Swing LOW (Note 7) | No Load ISINK = 5mA ISINK = 20mA | q q q | 20 120 60 170 200 500 | mV mV mV | | VOH | Output Voltage Swing HIGH (Note 7) | No Load ISOURCE = 5mA ISOURCE = 20mA | q q q | 50 140 115 260 360 700 | mV mV mV | | lsC | Short-Circuit Current | | q | +25 +55 | mA | | Is | Supply Current | | q | 1 5 22 | mA | | | Disable Supply Current | VSHDN= OV | q | 0.45 1.5 | mA | | GBW | Gain Bandwidth Product | Frequency = 2MHz | q | 1 25 250 | MHz | | SR | Slew Rate | Av = -1, RL =lk,Vo = +4V, Measure at Vo = +2V | q | 50 1 00 | V/ccS | | | | | | |
PBM-2015-605F Price| | | | S7905D | | | Characteristic | Symbol | Test Condition | Min | Typ | Max | Unit | | | | | Tj =25 | -4.8 | -5.0 | -5.2 | V | | Output Voltage | VOUT | IOUT=5mA 1A VIN=-7.OV -20V, PD 15W | -4.75 | -5O | -5.25 | | | | VIN=-7.OV -25V | | | 12.5 | 50 | | | Line Regulation | VOUT | VIN=-8.OV -12V | T=25 | | 4 | 15 | mV | | | | IOUT=5mA 1.OA | | | 15 | 100 | | | Load Regulation | VOUT | IOUT=250mA 750mA | Tj =25 | | 5 | 50 | mV | | Quiescent Current | IB | | Tj =25 | | 1.5 | 2.0 | mA | | | | VIN = -7.OV -25V | | O15 | 0.5 | | | Quiescent Current Change | IB | IOUT = 5mA ^ 1A | | O08 | 0.5 | mA | | Output Noise Voltage | VN | f=lOHz ^ 100KHz | Tj =25 | | 125 | | uVrms | | Ripple Rejection Ratio | RR | f=120Hz, VIN =-8.OV -18V | 54 | 60 | | dB | | Dropout Voltage | VD | IOUT=1A | Tj =25 | | 2.0 | | V | | Temperature coefficient of output Voltage Drift | Tcvo | IOUT= 5mA | | -0.4 | | mV/oC | | Peak Output Current | IPK | | T=25 | | 2.1 | | A | | | | | | | | |
PBM-2015-605F on stock Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
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