PBL3811-2 ROP10 Datasheet t stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. This are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Voltage values are with respect to network ground terminal. 2. This is the maximum voltage that should be applied to any output when it is in the off state. PBL3811-2 ROP10 Price| ID= | Bf | ^ | l f | | | | | | | | | VaS - .oov V09 - 250V | | | | | | | | | VD5 | =I | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | l | | | | | | | | | | | l | | | | | F TEST CICUIT SEE FISUFIE 13a&b | | | | | | | | | | |
PBL3811-2 ROP10 on stock| PARAMETER | SYMBOL | CONDITIONS | MIN TYP MAX | UNITS | | Output Frequency | fOUT | vcc = 3.3V or VBAT = 3.3V | 32 768 | kHz | | | | vcc = 3.3V or | OoC to +400C | +2 | | | Frequency Stability vs. Temperature (Commercial) | Af/fOUT | VBAT = 3.3V, aging offset = OOh | >400C to +700C | +3.5 | ppm | | | | vcc = 3.3V or | -400C to <OoC | +3.5 | | | Frequency Stability vs. | Af/fOUT | VBAT = 3.3V, | OoC to +400C | +2 | ppm | | Temperature (lndustrial) | aging offset = OOh | >400C to +850C | +3.5 | | Frequency Stability vs. Voltage | AfN | | 1 | ppmN | | | | | -400C | 0 7 | | | +250C | 0 1 | | Trim Register Frequency Sensitivity per LSB | Af/LSB | Specified at: | +700C | 0 4 | ppm | | +850C | 0 8 | | Temperature Accuracy | Temp | vcc = 3.3V or VBAT = 3.3V | -3 +3 | oc | | | | After reflow, | First year | ±1 0 | | | Crystal Aging | Af/f0 | not production tested | 0-10 years | +5.0 | ppm | | | | | | |
| Gate threshold voltage VGE = VCE,/C = 4 mA | E(th) | 4.5 | 5.5 | 6.5 | V | | Collector-emitter saturation voltage VGE = 15 V, /C = 100 A, Tj = 25 aC VGE = 15 V, /C = 100 A, Tj = 125 0C | VCE(sat) | | 2.5 3.1 | 3 3.7 | | Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 aC VCE = 1200 V, VGE = 0 V, Tj = 125 aC | /CES | | 1.5 6 | 2 | mA | | Gate-emitter leakage current VGE = 20 V, VCE = OV | /GES | | | 200 | nA | | | | | | |
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