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PBL3798QN Datasheet
NOTES 1In some combinations with Clock Configuration Mode = 1 (see Table III), SCLK will not be 50%. 2Performance of right and left channels is identical (exclusive of the Interchannel Gain Mismatch and Interchannel Phase Deviation specifications) Specifications subject to change without notice.
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Symbol Characteristic Min Typ. Max Units Test Condition
BVoss Drain-Source Breakdown Voltage -200 v VCS=OV,ID=-250jiA
ABV/ATj Breakdown Voltage Temp. Coeff. -0.2 V/oC ID=-250IJA See Fig 7
VGS(th) Gate Threshold Voltage -2.0 -4.0 v VDS=-5V,ID=-25011A
Gate-Source Leakage , Forward -100 VGS=-30V
IGSS Gate-Source Leakage , Reverse 100 nA VGS=30V
-10 VDS=-200V
IDSS Drain-to-Source Leakage Current -100 LA VDS=-160V,TC=1250C
RDScon) Static Drain-Source On-State Resistance 3.0 Q VCS=-10V,ID=-0.7A 0
9fs Forward Transconductance 1.0 Q VDS=-40V,ID=-0.7A 0
Cl Input Capacitance 220 285 pF VGS=OV,VDS=-25V,f =1MHz
Co Output Capacitance 45 65
C Reverse Transfer Capacitance 16 25 See Fig 5
td(on) Turn-On Delay Time 10 30
tr Rise Time 20 50 VDD=-100V,ID=-1.75A,
td(off) Turn-Off Delay Time 27 65 ns RG=18 Q
tf Fall Time 12 35 See Fig '13 0@
Qg Total Gate Charge 9 11 VDS=-160V,VGS=-10V,
Qg Gate-Source Charge 1.8 nC ID=-1.75A
Qgd Gate-Drain( " Miller " ) Charge 4.8 See Fig 6 & Fig '12 0@


PBL3798QN on stock
Exposed Pads The TSSOP-EP package has an exposed pad on the bottom of the package. This pad is electrically connect- ed to GND and should be connected to the ground plane for improved thermal conductivity. Do not route signals under this package.

| Ic )M'off'/
lcor l(on) ____ -
25 45