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PBL3770ASOS Datasheet

1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher Ti is allowed as an overload condition but at the threshold Tj00) the over temperature trip operates to protect the switch. 3 0f the output Power MOS transistor.
PBL3770ASOS Price

Characteristics	Symbol			Max	Units
Thermal Resistance, Junction to Case	R@J_C	Per Module, both conducting Per Junction, both conducting		O029 0.058	Yc/w Yc/w
Thermal Impedance Coefficients	Z@J-C	ZOJ-C= Ki (1-exp(-t/t i	Ki = 5.04 E-04	t 1= 2.47 E-03
		+ K2 (1-exp(-t/t 2	K2 = 2.31 E-03	t 2= 4.42 E-02
		+ K3 (1-exp(-t/t 3	K3 = 2.83 E-03	t 3= 1.370
		+ K4 (1-exp(-t/t 4	K4 =5.24 E-02	t 4= 9.668
Thermal Resistance, Case to Sink Lubricated	R@c_s	Per Module		O009	Yc/w

PBL3770ASOS on stock

Symbol	Parameter	Min	Typ.	Max	Unit
Vcc	Supply Voltage	3.0	3 3	3 6	V
GND	Ground	0	0	0	V
VIH	Input High Voltage	2.0		Vcc+0.3	V
VIL	Input Low Voltage	-0.30)		0 8	V

1. Low leakage equivalents of BAS16, BAV70, BAV99, BAW56 2. Irm = 5.0 nA max. @ 75 Volt Vr, 250C. 3. 85 Volt Vrrm. 4. Popular configurations o Single diode (BAS116) o Dual, common cathode (BAV170) o Dual, series or doubler configuration (BAV199) o Dual, common anode (BAW156) Benefits 1. Verylow reverse leakage. 2. High forward current of 140 mA. 3. Popular SOT-23 surface mount package. Availability Samples Now Available Production Quantities stock t0 6 weeks Data Sheets available NOW at: www.diodes.com.

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