PBH1R20F Datasheet| Type number | VR . maxirru1 rcDetitive peale reverse tiolhcje | VRW.mximum nan repemive IRFI*JFr{Ok ' IRRhllolax peok reverse voltaqe . 0 100{ . @ 150cC | IRRU 0 25t | | | V | V | m^m^ | | | 30HFU(R)-100 i 100 | 110 | 2 5 10 | jS | | lOHFU(R)- 200 | 200 | 220 | 2 5 10 | 35 | | iOHFU(R)~OO | 300 | 3 | 2.5 | 10 | 35 | | 30HFU(R)-400 | 400 | 440 | 2.5 | 10 | 35 | | 30HFU(R)-500 | 500 | 550 | 2.5 | 15 | 35 | | lOWJ(R)-SOO | 600 | 660 | 2.5 | 15 | M | | | | | | |
PBH1R20F Price| -) 1ESl IILMS ANDKE SULIS | | Test Item | Standard Test Method | Test Conditions | Note | Number of Damaged | | Resistance to Soldering Heat | JEITA ED-4701 300 302 | Tsld=260 50C, 10sec. 3mm from the base of the lead | 1 time | 0/100 | | Solderability | JEITA ED-4701 300 303 | Tsld=235 50C, Ssec. (using flux) | 1 time over 95% | 0/100 | | Thermal Shock | JEITA ED-4701 300 307 | OoC N lOOoC 15sec. 15sec. | 100 cycles | 0/100 | | Temperature Cycle | JEITA ED-4701 100 105 | -400C 250C lOOoC 250C 30min. Smin. 30min. Smin. | 100 cycles | 0/100 | | Moisture Resistance Cyclic | JEITA ED-4701 200 203 | 250C 650C -lOoC 90%RH 24hrs./lcycle | 10 cycles | 0/100 | | Terminal Strength (bending test) | JEITA ED-4701 400 401 | Load SN (0.5kgf) 00 N 900 00 bend 2 times | No noticeable damage | 0/100 | | Terminal Strength (pull test) | JEITA ED-4701 400 401 | Load 10N (lkgf) 10 1 sec. | No noticeable damage | 0/100 | | High Temperature Storage | JEITA ED-4701 200 201 | Ta=lOOoC | 1000hrs. | 0/100 | | Temperature Humidity Storage | JEITA ED-4701 100 103 | Ta=600C, RH=90% | 1000hrs. | 0/100 | | Low Temperature Storage | JEITA ED-4701 200 202 | Ta=-400C | 1000hrs. | 01100 | | Steady State Operating Life | | Ta=250C, IF=25mA | 500hrs. | 0/100 | | Steady State Operating Life ofHigh Humidity Heat | | 600C,RH=90%, IF=15mA | 500hrs. | 0/100 | | Steady State Operating Life ofLow Temperature | | Ta=-300C, IF=20mA | 1000hrs. | 0/100 | | | | | |
PBH1R20F on stock| | | | | } r Eo -____ | | yV I1.0±0 25i +2.54±0.2 I | | | |
| ltem | Symbol | Test conditions | Min. | Typ. | Max. | Unit | | Drain-Source Breakdown-Voltage | V (BR)DSS | ID=-lmA VGS=OV | -60 | | | V | | Gate Threshhold Voltage | V GS(th) | ID=-lmA VDS=VGS | 1.0 | 1.5 | -2,5 | V | | Zero Gate Voltage Drain Current | IDSS | VDS=-60V Tcrl=250C | | -10 | -500 | UA | | | VGS=OV Tcrl=1250C | | -0,2 | 1.0 | mA | | Gate Source Leakage Current | I GSS | VGS=+20V VDS=OV | | 10 | 100 | nA | | Drain Source On-State Resistance | R DScon) | ID=-12,5A VGS=-4V | | 0,08 | 0,11 | Q | | | | ID=-12,5A VGS=-10V | | 0,045 | 0,06 | Q | | Forward Transconductance | g fs | ID=-12,5A VDS=-25V | 7,5 | 15 | | S | | Input Capacitance | C iss | VDS=-25V | | 2000 | 3000 | pF | | Output Capacitance | C oss | VGS=OV | | 700 | 1050 | pF | | Reverse Transfer Capacitance | C rss | f=lMHz | | 450 | 680 | pF | | Turn-On-Time ton (ton=td(on)+tr) | t d(on) | Vcc=-30V | | 15 | 25 | ns | | tr | ID=-25A | | 80 | 120 | ns | | Turn-Off-Time toff (ton=td(off)+tf) | t d(off) | VGS=-10V | | 190 | 290 | ns | | tf | RGS=10 Q | | 90 | 140 | ns | | Avalanche Capability | I AV | L=lOOpH Tcrl=250C | -25 | | | A | | Diode Forward On-Voltage | V SD | IF=2xIDR VGS=OV Tcrl=250C | | -2,0 | -3,0 | V | | Reverse Recovery Time | t rr | IF=IDR VGS=OV | | 160 | | ns | | Reverse Recovery Charge | Q rr | -dIF/dt=lOONIJs Tcrl=250C | | 0,9 | | UC | | | | | | | |
|
