ADMap-20  > PB-04

suppliers of PB-04 and PDF data of PB-04

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

PB-04 Datasheet

Parameter Symbol Rating Unit
Supply Voltage VCC,max 1 2 V
Input Voltage VIN,max GND < VIN < VCC V
Output Current IC,max 1 0 mA
Power dissipation Pd 500 mW
Operating Temperature Topr -20+75 oC
Storage Temperature Tstg -40+125 oC


PB-04 on stock

SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
hFEl DC Current Gain 2000 15000 - VCE =-2.0 V.IC = -1.5 A hFE2** DC Current Gain 1000 - VCE = -2.0 V,IC = -3.0 A ton Turn On Time 0.5 Us . lC = _1.5 A,RL = 27 fl tStg Storage Time 2.0 Lis IBl = -lB2 = -1.5 mA, VCC -40 V tf FaIITime l.0 "s ,eeTestCircuit. ICBO Collector Cutoff Current -10 pA VCB ~ -100 V. IE = 0 IEBO Emitter Cutoff Current -1.0 mA VEB = -5.0 V,IC = O VCE(satl.. Collector Saturation Voltage -0.9 -1.2 V lC = -1.5 At lB = -1.5 mA VBE(sat)" Base Saturation Voltage -1.5 -2.0 V lC = -1.5 A,IB - -1.5 mA


(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.